| P-type β-gallium oxide: A new perspective for power and optoelectronic devices E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ... Materials Today Physics 3, 118-126, 2017 | 233 | 2017 |
| Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ... Journal of applied physics 100 (11), 2006 | 144 | 2006 |
| p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics E Chikoidze, C Sartel, I Madaci, H Mohamed, C Vilar, B Ballesteros, ... Crystal Growth & Design 20 (4), 2535-2546, 2020 | 96 | 2020 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 2013 | 95 | 2013 |
| Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ... IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017 | 71 | 2017 |
| Characterization and modeling of nn Si∕ SiC heterojunction diodes A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ... Journal of applied physics 102 (1), 2007 | 70 | 2007 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 2011 | 61 | 2011 |
| Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC MR Jennings, A Pérez-Tomás, M Davies, D Walker, L Zhu, P Losee, ... Solid-state electronics 51 (5), 797-801, 2007 | 53 | 2007 |
| Si∕ SiC heterojunctions fabricated by direct wafer bonding MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ... Electrochemical and Solid-State Letters 11 (11), H306, 2008 | 42 | 2008 |
| Enhanced field effect mobility on 4H-SiC by oxidation at 1500 C SM Thomas, YK Sharma, MA Crouch, CA Fisher, A Perez-Tomas, ... IEEE Journal of the Electron Devices Society 2 (5), 114-117, 2014 | 37 | 2014 |
| High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC A Pérez-Tomás, MR Jennings, M Davis, V Shah, T Grasby, JA Covington, ... Microelectronics Journal 38 (12), 1233-1237, 2007 | 36 | 2007 |
| Si/SiC bonded wafer: A route to carbon free SiO2 on SiC A Pérez-Tomás, M Lodzinski, OJ Guy, MR Jennings, M Placidi, J Llobet, ... Applied Physics Letters 94 (10), 2009 | 35 | 2009 |
| Analysis of inhomogeneous Ge/SiC heterojunction diodes PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ... Journal of Applied Physics 106 (9), 2009 | 34 | 2009 |
| Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation Z Chi, JJ Asher, MR Jennings, E Chikoidze, A Pérez-Tomás Materials 15 (3), 1164, 2022 | 32 | 2022 |
| High-temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs DP Hamilton, MR Jennings, A Pérez-Tomás, SAO Russell, SA Hindmarsh, ... IEEE Transactions on Power Electronics 32 (10), 7967-7979, 2016 | 32 | 2016 |
| Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC A Pérez-Tomás, A Fontserè, MR Jennings, PM Gammon Materials science in semiconductor processing 16 (5), 1336-1345, 2013 | 32 | 2013 |
| Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes A Perez-Tomas, E Chikoidze, Y Dumont, MR Jennings, SO Russell, ... Materials today energy 14, 100350, 2019 | 31 | 2019 |
| Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET A Fontserè, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ... Microelectronic engineering 88 (10), 3140-3144, 2011 | 31 | 2011 |
| Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors SM Thomas, MR Jennings, YK Sharma, CA Fisher, PA Mawby Materials Science Forum 778, 599-602, 2014 | 29 | 2014 |
| Study of a novel Si/SiC hetero-junction MOSFET L Chen, OJ Guy, MR Jennings, P Igic, SP Wilks, PA Mawby Solid-state electronics 51 (5), 662-666, 2007 | 27 | 2007 |
phil mawbyprofessor of power electronics, School of Engineering, university of warwick, UK在 warwick.ac.uk 的电子邮件经过验证
