| Study of GaP/Si heterojunction solar cells AS Gudovskikh, KS Zelentsov, AI Baranov, DA Kudryashov, IA Morozov, ... Energy Procedia 102, 56-63, 2016 | 30 | 2016 |
| Si doped GaP layers grown on Si wafers by low temperature PE-ALD AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ... Journal of Renewable and Sustainable Energy 10 (2), 2018 | 25 | 2018 |
| Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures AI Baranov, AS Gudovskikh, EV Nikitina, AY Egorov Technical Physics Letters 39, 1117-1120, 2013 | 24 | 2013 |
| The study of latex sphere lithography for high aspect ratio dry silicon etching I Morozov, A Gudovskikh, A Uvarov, A Baranov, V Sivakov, D Kudryashov physica status solidi (a) 217 (4), 1900535, 2020 | 23 | 2020 |
| GaNP-based photovoltaic device integrated on Si substrate LN Dvoretckaia, AD Bolshakov, AM Mozharov, MS Sobolev, DA Kirilenko, ... Solar Energy Materials and Solar Cells 206, 110282, 2020 | 20 | 2020 |
| Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ... physica status solidi (a) 216 (10), 1800617, 2019 | 19 | 2019 |
| Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation AV Uvarov, AS Gudovskikh, VN Nevedomskiy, AI Baranov, ... Journal of Physics D: Applied Physics 53 (34), 345105, 2020 | 18 | 2020 |
| Copper vapor laser with a pulse repetition frequency of 100 kHz MA Alaev, AI Baranov, NM Vereshchagin, IN Gnedin, YP Zherebtsov, ... Soviet Journal of Quantum Electronics 6 (5), 610, 1976 | 18 | 1976 |
| Lanthanide (III)-Incorporating Polysiloxanes as Materials for Light-Emitting Devices AS Miroshnichenko, KV Deriabin, AI Baranov, V Neplokh, DM Mitin, ... ACS Applied Polymer Materials 4 (4), 2683-2690, 2022 | 15 | 2022 |
| Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy AI Baranov, AS Gudovskikh, DA Kudryashov, AA Lazarenko, IA Morozov, ... Journal of Applied Physics 123 (16), 2018 | 12 | 2018 |
| Pulse-periodic electric-discharge laser with a low-pressure controlled gap AI Baranov, KV Gurkov, MI Lomaev, DP Patrushev, VF Tarasenko Pribory i Tekhnika Ehksperimenta, 108-111, 1994 | 11 | 1994 |
| Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ... Nanotechnology 31 (24), 244003, 2020 | 10 | 2020 |
| Problems in Atomic Science and Technology AI Baranov High-Energy Physics and Nuclear Physics Series 1 (13), 15, 1975 | 10 | 1975 |
| Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon DA Kudryashov, AS Gudovskikh, AI Baranov, IA Morozov, ... physica status solidi (a) 217 (4), 1900534, 2020 | 9 | 2020 |
| Dipolar cation accumulation at the interfaces of perovskite light-emitting solar cells DS Gets, GA Verkhogliadov, EY Danilovskiy, AI Baranov, SV Makarov, ... Journal of Materials Chemistry C 8 (47), 16992-16999, 2020 | 9 | 2020 |
| Low temperature plasma enhanced deposition approach for fabrication of microcrystalline GaP/Si superlattice AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ... Journal of Vacuum Science & Technology A 36 (2), 2018 | 8 | 2018 |
| Deep-level study of Ga (In) P (NAs) alloys grown on Si substrates AI Baranov, JP Kleider, AS Gudovskikh, A Darga, EV Nikitina, AY Egorov Journal of Physics: Conference Series 741 (1), 012077, 2016 | 7 | 2016 |
| PROCHNOST METALLOKERAMICHESKOGO TVERDOGO SPLAVA KARBID VOLFRAMA KOBALT V ZAVISIMOSTI OT TEMPERATURY I RAZMERA ZEREN GS Kreimer, OS Safonova, AI Baranov ZHURNAL TEKHNICHESKOI FIZIKI 25 (1), 117-124, 1955 | 7 | 1955 |
| Si Nanowire-Based Schottky Sensors for Selective Sensing of NH3 and HCl via Impedance Spectroscopy VM Kondratev, EA Vyacheslavova, T Shugabaev, DA Kirilenko, ... ACS Applied Nano Materials 6 (13), 11513-11523, 2023 | 6 | 2023 |
| Impact of Interface Recombination on Quantum Efficiency of a‐Si: H/c‐Si Solar Cells Based on Si Wires A Gudovskikh, D Kudryashov, A Baranov, A Uvarov, I Morozov, ... physica status solidi (a) 218 (22), 2100339, 2021 | 6 | 2021 |
