Metal silicides in CMOS technology: Past, present, and future trends SL Zhang, M Östling Critical Reviews in Solid State and Materials Sciences 28 (1), 1-129, 2003 | 450 | 2003 |
A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering Z Qiu, Z Zhang, M Ostling, SL Zhang IEEE Transactions on Electron Devices 55 (1), 396-403, 2007 | 358 | 2007 |
Scalable inkjet printing of shear-exfoliated graphene transparent conductive films S Majee, M Song, SL Zhang, ZB Zhang Carbon 102, 51-57, 2016 | 154 | 2016 |
Finite-size scaling in stick percolation J Li, SL Zhang Physical Review E—Statistical, Nonlinear, and Soft Matter Physics 80 (4 …, 2009 | 145 | 2009 |
Nickel-based contact metallization for SiGe MOSFETs: progress and challenges SL Zhang Microelectronic Engineering 70 (2-4), 174-185, 2003 | 143 | 2003 |
Mechanically stretchable and electrically insulating thermal elastomer composite by liquid alloy droplet embedment SH Jeong, S Chen, J Huo, EK Gamstedt, J Liu, SL Zhang, ZB Zhang, ... Scientific reports 5 (1), 18257, 2015 | 138 | 2015 |
Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal Z Zhang, Z Qiu, R Liu, M Ostling, SL Zhang IEEE electron device letters 28 (7), 565-568, 2007 | 123 | 2007 |
Morphological and phase stability of nickel–germanosilicide on under thermal stress T Jarmar, J Seger, F Ericson, D Mangelinck, U Smith, SL Zhang Journal of applied physics 92 (12), 7193-7199, 2002 | 113 | 2002 |
Photothermoelectric and photovoltaic effects both present in MoS2 Y Zhang, H Li, L Wang, H Wang, X Xie, SL Zhang, R Liu, ZJ Qiu Scientific reports 5 (1), 7938, 2015 | 109 | 2015 |
Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: and NiSi SL Zhang, U Smith Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (4 …, 2004 | 103 | 2004 |
Oxidation of silicon–germanium alloys. I. An experimental study PE Hellberg, SL Zhang, FM d’Heurle, CS Petersson Journal of applied physics 82 (11), 5773-5778, 1997 | 102 | 1997 |
Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum A Mouroux, SL Zhang, W Kaplan, S Nygren, M Östling, CS Petersson Applied physics letters 69 (7), 975-977, 1996 | 101 | 1996 |
Stretchable thermoelectric generators metallized with liquid alloy SH Jeong, FJ Cruz, S Chen, L Gravier, J Liu, Z Wu, K Hjort, SL Zhang, ... ACS applied materials & interfaces 9 (18), 15791-15797, 2017 | 86 | 2017 |
Increased nucleation temperature of in the reaction of Ni thin films with J Seger, SL Zhang, D Mangelinck, HH Radamson Applied physics letters 81 (11), 1978-1980, 2002 | 85 | 2002 |
Defect formation in graphene during low-energy ion bombardment P Ahlberg, FOL Johansson, ZB Zhang, U Jansson, SL Zhang, A Lindblad, ... APL Materials 4 (4), 2016 | 83 | 2016 |
On Valence-Band Splitting in Layered MoS2 Y Zhang, H Li, H Wang, R Liu, SL Zhang, ZJ Qiu ACS nano 9 (8), 8514-8519, 2015 | 83 | 2015 |
Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/films PE Hellberg, SL Zhang, CS Petersson IEEE Electron Device Letters 18 (9), 456-458, 1997 | 83 | 1997 |
Ink-jet printed highly conductive pristine graphene patterns achieved with water-based ink and aqueous doping processing S Majee, C Liu, B Wu, SL Zhang, ZB Zhang Carbon 114, 77-83, 2017 | 77 | 2017 |
Alternating current dielectrophoresis of carbon nanotubes ZB Zhang, XJ Liu, EEB Campbell, SL Zhang Journal of Applied Physics 98 (5), 2005 | 75 | 2005 |
Thickness considerations of two-dimensional layered semiconductors for transistor applications Y Zhang, H Li, H Wang, H Xie, R Liu, SL Zhang, ZJ Qiu Scientific reports 6 (1), 29615, 2016 | 69 | 2016 |