受强制性开放获取政策约束的文章 - Paul Crump了解详情
无法在其他位置公开访问的文章：39 篇
Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers
X Wang, P Crump, H Wenzel, A Liero, T Hoffmann, A Pietrzak, CM Schultz, ...
IEEE Journal of Quantum Electronics 46 (5), 658-665, 2010
强制性开放获取政策： German Research Foundation
Progress in increasing the maximum achievable output power of broad area diode lasers
P Crump, H Wenzel, G Erbert, G Tränkle
High-Power Diode Laser Technology and Applications X 8241, 222-231, 2012
强制性开放获取政策： German Research Foundation
1060-nm Ridge Waveguide Lasers Based on Extremely Wide Waveguides for 1.3-W Continuous-Wave Emission Into a Single Mode With FWHM Divergence Angle of $9^{\circ}\times 6^{\circ} $
A Pietrzak, H Wenzel, P Crump, F Bugge, J Fricke, M Spreemann, ...
IEEE Journal of Quantum Electronics 48 (5), 568-575, 2012
强制性开放获取政策： German Research Foundation
17-W near-diffraction-limited 970-nm output from a tapered semiconductor optical amplifier
X Wang, G Erbert, H Wenzel, P Crump, B Eppich, S Knigge, P Ressel, ...
IEEE Photonics Technology Letters 25 (2), 115-118, 2013
强制性开放获取政策： German Research Foundation
The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K
C Frevert, P Crump, F Bugge, S Knigge, G Erbert
Semiconductor Science and Technology 31 (2), 025003, 2015
强制性开放获取政策： Leibniz Association
940nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K: analysis of remaining limits and path to higher efficiency and power at 200K and 300K
C Frevert, F Bugge, S Knigge, A Ginolas, G Erbert, P Crump
High-Power Diode Laser Technology and Applications XIV 9733, 113-125, 2016
强制性开放获取政策： Leibniz Association
Cryogenic ultra-high power infrared diode laser bars
P Crump, C Frevert, H Hösler, F Bugge, S Knigge, W Pittroff, G Erbert, ...
Novel In-Plane Semiconductor Lasers XIII 9002, 173-183, 2014
强制性开放获取政策： Leibniz Association
A brief history of kilowatt-class diode-laser bars
P Crump, G Tränkle
Novel In-Plane Semiconductor Lasers XIX 11301, 148-156, 2020
强制性开放获取政策： German Research Foundation, Leibniz Association, Federal Ministry of …
Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers
P Crump, M Wilkens, M Hübner, S Arslan, M Niemeyer, PS Basler, ...
High-Power Diode Laser Technology XVIII 11262, 16-22, 2020
强制性开放获取政策： Federal Ministry of Education and Research, Germany
Numerical study of high-power semiconductor lasers for operation at sub-zero temperatures
KH Hasler, C Frevert, P Crump, G Erbert, H Wenzel
Semiconductor Science and Technology 32 (4), 045004, 2017
强制性开放获取政策： Leibniz Association
Progress in efficiency-optimized high-power diode lasers
A Pietrzak, R Hülsewede, M Zorn, O Hirsekorn, J Sebastian, J Meusel, ...
Technologies for Optical Countermeasures X; and High-Power Lasers 2013 …, 2013
强制性开放获取政策： German Research Foundation
Low-temperature optimized 940 nm diode laser bars with 1.98 kW peak power at 203 K
C Frevert, P Crump, F Bugge, S Knigge, A Ginolas, G Erbert
2015 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2015
强制性开放获取政策： Leibniz Association
Progress in high-energy-class diode laser pump sources
P Crump, C Frevert, F Bugge, S Knigge, G Erbert, G Tränkle, A Pietrzak, ...
High-Power Diode Laser Technology and Applications XIII 9348, 250-259, 2015
强制性开放获取政策： Leibniz Association
Thermo-optical simulation of high-power diode lasers
J Pomplun, H Wenzel, S Burger, L Zschiedrich, M Rozova, F Schmidt, ...
Physics and Simulation of Optoelectronic Devices XX 8255, 218-224, 2012
强制性开放获取政策： German Research Foundation
Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers
S Arslan, H Wenzel, J Fricke, A Thies, A Ginolas, C Stölmacker, ...
Novel In-Plane Semiconductor Lasers XXI 12021, 93-100, 2022
强制性开放获取政策： US Department of Energy
Study of waveguide designs for high-power 9xx-nm diode lasers operating at 200 K
C Frevert, P Crump, F Bugge, S Knigge, G Erbert
High-Power Diode Laser Technology and Applications XII 8965, 120-130, 2014
强制性开放获取政策： Leibniz Association
56W optical output power at 970nm from a truncated tapered semiconductor optical amplifier
X Wang, H Wenzel, B Eppich, P Crump, M Spreemann, A Ginolas, ...
IEEE Photonic Society 24th Annual Meeting, 577-578, 2011
强制性开放获取政策： German Research Foundation
Joule-class 940-nm diode laser bars for millisecond pulse applications
P Crump, C Frevert, A Ginolas, S Knigge, A Maaßdorf, J Lotz, ...
IEEE Photonics Technology Letters 27 (15), 1663-1666, 2015
强制性开放获取政策： Leibniz Association
Progress in experimental studies into the beam parameter product of GaAs-based high-power diode lasers
P Crump, M Elattar, MJ Miah, M Ekterai, MM Karow, D Martin, ...
High-Power Diode Laser Technology XX 11983, 43-52, 2022
强制性开放获取政策： Federal Ministry of Education and Research, Germany
Current spreading suppression by O-and Si-implantation in high power broad area diode lasers
D Martin, P Della Casa, T Adam, C Goerke, A Thies, K Häusler, O Brox, ...
High-Power Diode Laser Technology XVII 10900, 115-121, 2019
强制性开放获取政策： Federal Ministry of Education and Research, Germany
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