Current-induced polarization and the spin Hall effect at room temperature NP Stern, S Ghosh, G Xiang, M Zhu, N Samarth, DD Awschalom Physical review letters 97 (12), 126603, 2006 | 290 | 2006 |
Selective titanium nitride deposition using oxides of lanthanum masks K Watanabe, M Zhu, BA Cohen, MT Whitman, B Kannan US Patent 10,332,747, 2019 | 198 | 2019 |
Temperature dependence of magnetization drift velocity and current polarization in by spin-wave Doppler measurements M Zhu, CL Dennis, RD McMichael Physical Review B—Condensed Matter and Materials Physics 81 (14), 140407, 2010 | 71 | 2010 |
Molecular Self-Assembly at Bare Semiconductor Surfaces: Cooperative Substrate− Molecule Effects in Octadecanethiolate Monolayer Assemblies on GaAs (111),(110), and (100) CL McGuiness, GA Diehl, D Blasini, DM Smilgies, M Zhu, N Samarth, ... ACS nano 4 (6), 3447-3465, 2010 | 70 | 2010 |
HAMR NFT materials with improved thermal stability M Zhu, T Zhao, SC Riemer, MC Kautzky US Patent 9,251,837, 2016 | 51 | 2016 |
Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers M Zhu, MJ Wilson, BL Sheu, P Mitra, P Schiffer, N Samarth Applied Physics Letters 91 (19), 2007 | 33 | 2007 |
Noncollinear spin valve effect in ferromagnetic semiconductor trilayers G Xiang, BL Sheu, M Zhu, P Schiffer, N Samarth Physical Review B—Condensed Matter and Materials Physics 76 (3), 035324, 2007 | 32 | 2007 |
Devices including near field transducer and adhesion layers T Zhao, M Zhu, X Huang, MC Kautzky US Patent 9,281,003, 2016 | 29 | 2016 |
Methods of forming magnetic materials and articles formed thereby S Sahoo, M Zhu, MC Kautzky, GS Girolami, JR Abelson, P Zhang, ... US Patent App. 13/630,036, 2016 | 26 | 2016 |
Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures MJ Wilson, M Zhu, RC Myers, DD Awschalom, P Schiffer, N Samarth Physical Review B—Condensed Matter and Materials Physics 81 (4), 045319, 2010 | 24 | 2010 |
Modification of edge mode dynamics by oxidation in Ni80Fe20 thin film edges M Zhu, RD McMichael Journal of Applied Physics 107 (10), 2010 | 23 | 2010 |
Enhanced magnetization drift velocity and current polarization in (cofe) 1− xgex alloys M Zhu, BD Soe, RD McMichael, MJ Carey, S Maat, JR Childress Applied Physics Letters 98 (7), 2011 | 17 | 2011 |
Quasireversible magnetoresistance in exchange-spring tunnel junctions M Zhu, MJ Wilson, P Mitra, P Schiffer, N Samarth Physical Review B—Condensed Matter and Materials Physics 78 (19), 195307, 2008 | 16 | 2008 |
Magnetoresistance in an asymmetric resonant tunneling diode E Likovich, K Russell, W Yi, V Narayanamurti, KC Ku, M Zhu, N Samarth Physical Review B—Condensed Matter and Materials Physics 80 (20), 201307, 2009 | 15 | 2009 |
Devices including near field transducer and adhesion layer T Zhao, M Zhu, X Huang, MC Kautzky US Patent 9,747,939, 2017 | 14 | 2017 |
Impact of Gd dopants on current polarization and the resulting effect on spin transfer velocity in Permalloy wires RL Thomas, M Zhu, CL Dennis, V Misra, RD McMichael Journal of Applied Physics 110 (3), 2011 | 14 | 2011 |
Effect of interactions on edge property measurements in magnetic multilayers M Zhu, RD McMichael Journal of Applied Physics 109 (4), 043904-043904-8, 2011 | 12 | 2011 |
Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor M Zhu, X Li, G Xiang, N Samarth Physical Review B—Condensed Matter and Materials Physics 76 (20), 201201, 2007 | 11 | 2007 |
Ferromagnetic resonance study of MnAs∕(Ga, Mn) As bilayers M Cubukcu, HJ Von Bardeleben, K Khazen, JL Cantin, M Zhu, MJ Wilson, ... Journal of Applied Physics 105 (7), 2009 | 10 | 2009 |
Internal magnetic field in thin ZnSe epilayers S Ghosh, NP Stern, B Maertz, DD Awschalom, G Xiang, M Zhu, N Samarth Applied physics letters 89 (24), 2006 | 10 | 2006 |