受强制性开放获取政策约束的文章 - Tomislav Suligoj了解详情
无法在其他位置公开访问的文章：4 篇
Evaluation of the radiation hardness of photodiodes in 180-nm CMOS technology for medical applications
F Šegmanović, G Meinhardt, F Roger, I Jonak-Auer, T Suligoj
IEEE transactions on nuclear science 68 (9), 2367-2374, 2021
强制性开放获取政策： European Commission
MALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technology
D Dobrijević, P Allport, I Asensi, DV Berlea, D Bortoletto, C Buttar, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2022
强制性开放获取政策： European Commission
Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35 bm CMOS technology
F Šegmanović, F Roger, G Meinhardt, I Jonak-Auer, T Suligoj
2018 41st International Convention on Information and Communication …, 2018
强制性开放获取政策： European Commission
Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process
B Požar, I Berdalović, T Knežević, T Suligoj
Ieee photonics technology letters, 2024
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可在其他位置公开访问的文章：25 篇
Mini-MALTA: radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
M Dyndal, V Dao, P Allport, IA Tortajada, M Barbero, S Bhat, D Bortoletto, ...
Journal of Instrumentation 15 (02), P02005, 2020
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Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
H Pernegger, P Allport, IA Tortajada, M Barbero, P Barrillon, I Berdalovic, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2021
强制性开放获取政策： European Commission
A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 Monolithic Sensor
F Piro, P Allport, I Asensi, I Berdalovic, D Bortoletto, C Buttar, R Cardella, ...
IEEE transactions on nuclear science 69 (6), 1299-1309, 2022
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Limits on thinning of boron layers with/without metal contacting in PureB Si (photo) diodes
T Knežević, X Liu, E Hardeveld, T Suligoj, LK Nanver
IEEE electron device letters 40 (6), 858-861, 2019
强制性开放获取政策： Netherlands Organisation for Scientific Research
MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade
I Berdalovic, LS Argemi, R Cardella, F Dachs, V Dao, LFS de Acedo, ...
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2018
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Performance of the MALTA telescope
M Van Rijnbach, G Gustavino, P Allport, IA Tortajada, DV Berlea, ...
The European Physical Journal C 83 (7), 581, 2023
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MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
H Pernegger, P Allport, DV Berlea, A Birman, D Bortoletto, C Buttar, ...
Journal of Instrumentation 18 (09), P09018, 2023
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Timing performance of radiation hard MALTA monolithic pixel sensors
G Gustavino, P Allport, I Asensi, DV Berlea, D Bortoletto, C Buttar, ...
Journal of Instrumentation 18 (03), C03011, 2023
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Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm
M van Rijnbach, P Allport, I Asensi, I Berdalovic, D Bortoletto, C Buttar, ...
Journal of Instrumentation 17 (04), C04034, 2022
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Implantation site design for large area diamond quantum device fabrication
M Vićentijević, M Jakšić, T Suligoj
Scientific reports 13 (1), 13483, 2023
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Detection of low-penetrating ions in diamond at room temperature
M Vićentijević, M Jaksic, G Provatas, T Suligoj
IEEE transactions on nuclear science 69 (11), 2252-2261, 2022
强制性开放获取政策： European Commission
Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates
M van Rijnbach, DV Berlea, V Dao, M Gaži, P Allport, IA Tortajada, ...
The European Physical Journal C 84 (3), 251, 2024
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MALTA monolithic pixel sensors in TowerJazz 180 nm technology
CS Sánchez, P Allport, IA Tortajada, D Bortoletto, F Dachs, V Dao, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2023
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Radiation hardness of MALTA2, a monolithic active pixel sensor for tracking applications
DV Berlea, P Allport, IA Tortajada, D Bortoletto, C Buttar, E Charbon, ...
IEEE Transactions on Nuclear Science, 2023
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Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents
T Knežević, T Suligoj, I Capan, LK Nanver
IEEE Transactions on Electron Devices 68 (6), 2810-2817, 2021
强制性开放获取政策： Netherlands Organisation for Scientific Research
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50° C
T Knežević, T Suligoj, X Liu, LK Nanver, A Elsayed, JF Dick, J Schulze
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
强制性开放获取政策： Netherlands Organisation for Scientific Research
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