关注
George Haddad
George Haddad
Professor,univ.of Mich.
在 umich.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Digital circuit applications of resonant tunneling devices
P Mazumder, S Kulkarni, M Bhattacharya, JP Sun, GI Haddad
Proceedings of the IEEE 86 (4), 664-686, 1998
6521998
Resonant tunneling diodes: Models and properties
JP Sun, GI Haddad, P Mazumder, JN Schulman
Proceedings of the IEEE 86 (4), 641-660, 1998
5511998
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition
K Yang, JR East, GI Haddad
Solid-State Electronics 36 (3), 321-330, 1993
2661993
Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above
H Eisele, A Rydberg, GI Haddad
IEEE Transactions on Microwave Theory and Techniques 48 (4), 626-631, 2000
1662000
Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates
JJ Barnes, RJ Lomax, GI Haddad
IEEE transactions on electron devices 23 (9), 1042-1048, 1976
165*1976
Characteristics of coupled microstrip transmission lines-I: Coupled-mode formulation of inhomogeneous lines
MK Krage, GI Haddad
IEEE Transactions on Microwave theory and techniques 18 (4), 217-222, 1970
1401970
Compact multiple-valued multiplexers using negative differential resistance devices
HL Chan, S Mohan, P Mazumder, GI Haddad
IEEE Journal of Solid-State Circuits 31 (8), 1151-1156, 1996
1381996
Two-terminal millimeter-wave sources
H Eisele, GI Haddad
IEEE Transactions on Microwave Theory and Techniques 46 (6), 739-746, 1998
1361998
Digital logic design using negative differential resistance diodes and field-effect transistors
S Kulkarni, P Mazumder, GI Haddad
US Patent 5,903,170, 1999
1351999
Power and stability limitations of resonant tunneling diodes
C Kidner, I Mehdi, JR East, GI Haddad
IEEE Transactions on microwave Theory and Techniques 38 (7), 864-872, 1990
1221990
Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems
SG Yu, KW Kim, MA Stroscio, GJ Iafrate, JP Sun, GI Haddad
Journal of applied physics 82 (7), 3363-3367, 1997
1131997
Design, modeling, and characterization of monolithically integrated InP-based (1.55/spl mu/m) high-speed (24 Gb/s) pin/HBT front-end photoreceivers
K Yang, AL Gutierrez-Aitken, X Zhang, GI Haddad, P Bhattacharya
Journal of lightwave technology 14 (8), 1831-1839, 1996
1001996
High-efficiency class-A power amplifiers with a dual-bias-control scheme
K Yang, GI Haddad, JR East
IEEE Transactions on Microwave Theory and Techniques 47 (8), 1426-1432, 1999
981999
Time‐dependent modeling of resonant‐tunneling diodes from direct solution of the Schrödinger equation
RK Mains, GI Haddad
Journal of applied physics 64 (7), 3564-3569, 1988
981988
Simulation of GaAs IMPATT diodes including energy and velocity transport equations
RK Mains, GI Haddad, PA Blakey
IEEE transactions on electron devices 30 (10), 1327-1338, 1983
901983
Nonlinear properties of IMPATT devices
WE Schroeder, GI Haddad
Proceedings of the IEEE 61 (2), 153-182, 1973
861973
Tunneling devices and applications in high functionality/speed digital circuits
GI Haddad, P Mazumder
Solid-State Electronics 41 (10), 1515-1524, 1997
851997
Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios
RK Mains, GI Haddad
Journal of Applied Physics 64 (10), 5041-5044, 1988
851988
Frequency-Dependent Characteristics of MicrostripTransmission Lines
MK Krage, GI Haddad
IEEE Transactions on Microwave Theory and Techniques 20 (10), 678-688, 1972
831972
Microwave solid-state active devices
GI Haddad, RJ Trew
IEEE Transactions on Microwave Theory and Techniques 50 (3), 760-779, 2002
772002
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