受强制性开放获取政策约束的文章 - Ignacio Iñiguez-de-la-Torre了解详情
无法在其他位置公开访问的文章：8 篇
Optimization of the epilayer design for the fabrication of doped GaN planar Gunn diodes
S Garcia-Sanchez, I Iniguez-de-la-Torre, S Perez, T Gonzalez, J Mateos
IEEE Transactions on Electron Devices 69 (2), 514-520, 2021
强制性开放获取政策： Government of Spain
Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
G Paz-Martínez, I Íñiguez-De-La-Torre, H Sánchez-Martín, ...
Journal of Applied Physics 132 (13), 2022
强制性开放获取政策： Government of Spain
Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
E Pérez-Martín, H Sánchez-Martín, T González, J Mateos, ...
Nanotechnology 34 (32), 325201, 2023
强制性开放获取政策： Government of Spain
Ballistic deflection transistor: Geometry dependence and boolean operations
I Iñiguez-de-la-Torre, J Mateos, T González, V Kaushal, M Margala
2013 Spanish Conference on Electron Devices, 187-190, 2013
强制性开放获取政策： Government of Spain
Noise in terahertz detectors based on semiconductor nanochannels
JF Millithaler, I Iñiguez-de-la-Torre, T González, J Mateos, P Sangaré, ...
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013
强制性开放获取政策： Government of Spain
Modeling and study of two-BDT-nanostructure based sequential logic circuits
P Marthi, SR Reza, N Hossain, JF Millithaler, M Margala, ...
Proceedings of the 26th edition on Great Lakes Symposium on VLSI, 393-396, 2016
强制性开放获取政策： US National Science Foundation
Noise and terahertz rectification in semiconductor diodes and transistors
J Mateos, I Iñiguez-de-la-Torre, T González
2011 21st International Conference on Noise and Fluctuations, 16-21, 2011
强制性开放获取政策： Government of Spain
200 GHz communication system using unipolar InAs THz rectifiers
G Ducournau, A Westlund, P Sangare, C Gaquière, PA Nilsson, ...
2013 38th International Conference on Infrared, Millimeter, and Terahertz …, 2013
强制性开放获取政策： Government of Spain
可在其他位置公开访问的文章：55 篇
Phonon black-body radiation limit for heat dissipation in electronics
J Schleeh, J Mateos, I Íñiguez-de-la-Torre, N Wadefalk, PA Nilsson, ...
Nature materials 14 (2), 187-192, 2015
强制性开放获取政策： Government of Spain
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 2013
强制性开放获取政策： Government of Spain
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre, J Mateos, T González, ...
Journal of Applied Physics 111 (11), 2012
强制性开放获取政策： Government of Spain
Comparative Monte Carlo analysis of InP-and GaN-based gunn diodes
S García, S Pérez, I Íñiguez-De-La-Torre, J Mateos, T González
Journal of Applied Physics 115 (4), 2014
强制性开放获取政策： Government of Spain
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre, P Nouvel, L Varani, P Sangaré, ...
IEEE Transactions on Electron Devices 63 (1), 353-359, 2015
强制性开放获取政策： European Commission, Government of Spain
Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations
S García, I Íñiguez-de-la-Torre, J Mateos, T González, S Pérez
Semiconductor Science and Technology 31 (6), 065005, 2016
强制性开放获取政策： Government of Spain
Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
JF Millithaler, I Íñiguez-de-la-Torre, A Iñiguez-de-la-Torre, T González, ...
Applied Physics Letters 104 (7), 2014
强制性开放获取政策： Government of Spain
Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
S García, I Iñiguez-De-La-Torre, S Pérez, J Mateos, T González
Journal of Applied Physics 114 (7), 2013
强制性开放获取政策： Government of Spain
Nonlinear nanochannels for room temperature terahertz heterodyne detection
J Torres, P Nouvel, A Penot, L Varani, P Sangaré, B Grimbert, M Faucher, ...
Semiconductor science and technology 28 (12), 125024, 2013
强制性开放获取政策： Government of Spain
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
H Sánchez-Martín, S Sánchez-Martín, I Íñiguez-De-La-Torre, S Pérez, ...
Semiconductor Science and Technology 33 (9), 095016, 2018
强制性开放获取政策： Government of Spain
Operation of GaN planar nanodiodes as THz detectors and mixers
I Iñiguez-De-La-Torre, C Daher, JF Millithaler, J Torres, P Nouvel, ...
IEEE Transactions on Terahertz Science and Technology 4 (6), 670-677, 2014
强制性开放获取政策： Government of Spain
Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study
A Íñiguez-de-la-Torre, I Íñiguez-de-la-Torre, J Mateos, T González
Applied Physics Letters 99 (6), 2011
强制性开放获取政策： Government of Spain
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