受强制性开放获取政策约束的文章 - M.Fátima Romero Rojo了解详情
无法在其他位置公开访问的文章：11 篇
Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs
S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, F Calle
IEEE Transactions on Electron Devices 60 (12), 4105-4111, 2013
强制性开放获取政策： Government of Spain
Volatility persistence in cryptocurrency markets under structural breaks
EJA Abakah, LA Gil-Alana, G Madigu, F Romero-Rojo
International Review of Economics & Finance 69, 680-691, 2020
强制性开放获取政策： Government of Spain
Physics-based analytical model for input, output, and reverse capacitance of a GaN HEMT with the field-plate structure
D Čučak, M Vasić, O García, JA Oliver, P Alou, JA Cobos, A Wang, ...
IEEE Transactions on Power Electronics 32 (3), 2189-2202, 2017
强制性开放获取政策： Government of Spain
Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, AD Koehler, ...
Semiconductor Science and Technology 29 (11), 115013, 2014
强制性开放获取政策： Government of Spain
Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
Z Gao, MF Romero, MÁ Pampillón, E San Andrés, F Calle
IEEE Transactions on Electron Devices 63 (7), 2729-2734, 2016
强制性开放获取政策： Government of Spain
Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
M Feneberg, MF Romero, B Neuschl, K Thonke, M Röppischer, C Cobet, ...
Thin Solid Films 571, 502-505, 2014
强制性开放获取政策： German Research Foundation
Impact of AlN Spacer on Metal–Semiconductor–Metal Pt–InAlGaN/GaN Heterostructures for Ultraviolet Detection
T Brazzini, S Pandey, MF Romero, PY Bokov, M Feneberg, G Tabares, ...
Japanese Journal of Applied Physics 52 (8S), 08JK04, 2013
强制性开放获取政策： Government of Spain
Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
A Minj, MF Romero, Y Wang, Ö Tuna, M Feneberg, R Goldhahn, ...
Applied Physics Letters 109 (22), 221106, 2016
强制性开放获取政策： Government of Spain
Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
MF Romero, M Feneberg, P Moser, C Berger, J Bläsing, A Dadgar, ...
Japanese Journal of Applied Physics 52 (8S), 08JK02, 2013
强制性开放获取政策： Government of Spain
Analysis of InAl (Ga) N/GaN wet-etching by structural, morphological and electrical methods
T Brazzini, S Martin-Horcajo, MF Romero, Ž Gacěvić, F Calle
Semiconductor Science and Technology 29 (7), 075003, 2014
强制性开放获取政策： Government of Spain
Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices
A Redondo-Cubero, L Vázquez, LC Alves, V Corregidor, MF Romero, ...
Journal of Physics D: Applied Physics 47 (18), 185302, 2014
强制性开放获取政策： Government of Spain
可在其他位置公开访问的文章：15 篇
Cryptocurrencies and stock market indices. Are they related?
LA Gil-Alana, EJA Abakah, MFR Rojo
Research in International Business and Finance 51, 101063, 2020
强制性开放获取政策： Government of Spain
Anisotropic absorption and emission of bulk AlN
M Feneberg, MF Romero, M Röppischer, C Cobet, N Esser, B Neuschl, ...
Physical Review B 87 (23), 235209, 2013
强制性开放获取政策： German Research Foundation
The impact of geopolitical risk on the behavior of oil prices and freight rates
M Monge, MFR Rojo, LA Gil-Alana
Energy 269, 126779, 2023
强制性开放获取政策： Government of Spain
Compound Semiconductor Devices-Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance
MF Romero, A Jímenez, F González-Posada Flores, S Martin-Horcajo, ...
IEEE Transactions on Electron Devices 59 (2), 374, 2012
强制性开放获取政策： Government of Spain
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
Z Gao, MF Romero, A Redondo-Cubero, MA Pampillón, E San Andrés, ...
IEEE Electron Device Letters 38 (5), 611-614, 2017
强制性开放获取政策： Government of Spain
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
S Martin-Horcajo, A Wang, A Bosca, MF Romero, MJ Tadjer, AD Koehler, ...
Semiconductor Science and Technology 30 (3), 035015, 2015
强制性开放获取政策： Government of Spain
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2Gate Dielectric
Z Gao, MF Romero, F Calle
IEEE Transactions on Electron Devices 65 (8), 3142-3148, 2018
强制性开放获取政策： Government of Spain
Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
MF Romero, M Feneberg, P Moser, C Berger, J Bläsing, A Dadgar, ...
Applied Physics Letters 100 (21), 212101, 2012
强制性开放获取政策： German Research Foundation
Optical properties of magnesium doped AlxGa1−xN (0.61 ≤ x ≤ 0.73)
M Feneberg, S Osterburg, MF Romero, B Garke, R Goldhahn, ...
Journal of applied physics 116 (14), 143103, 2014
强制性开放获取政策： 国家自然科学基金委员会, German Research Foundation
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