| In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy Z Zuo, Z Xu, R Zheng, A Khanaki, JG Zheng, J Liu Scientific reports 5 (1), 14760, 2015 | 102 | 2015 |
| Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer C Zhu, Z Huo, Z Xu, M Zhang, Q Wang, J Liu, S Long, M Liu Applied Physics Letters 97 (25), 2010 | 90 | 2010 |
| Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy Z Xu, H Tian, A Khanaki, R Zheng, M Suja, J Liu Scientific reports 7 (1), 43100, 2017 | 61 | 2017 |
| Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy Z Xu, R Zheng, A Khanaki, Z Zuo, J Liu Applied Physics Letters 107 (21), 2015 | 45 | 2015 |
| Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy Z Xu, A Khanaki, H Tian, R Zheng, M Suja, JG Zheng, J Liu Applied Physics Letters 109 (4), 2016 | 41 | 2016 |
| Role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers H Tian, A Khanaki, P Das, R Zheng, Z Cui, Y He, W Shi, Z Xu, R Lake, ... Nano letters 18 (6), 3352-3361, 2018 | 38 | 2018 |
| Investigation of One-Dimensional Thickness Scaling onResistive Switching Device Performance M Wang, H Lv, Q Liu, Y Li, Z Xu, S Long, H Xie, K Zhang, X Liu, H Sun, ... IEEE electron device letters 33 (11), 1556-1558, 2012 | 31 | 2012 |
| Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy C Zhu, Z Xu, Z Huo, R Yang, Z Zheng, Y Cui, J Liu, Y Wang, D Shi, ... Applied Physics Letters 99 (22), 2011 | 24 | 2011 |
| Low-temperature growth of graphene on iron substrate by molecular beam epitaxy R Zheng, Z Xu, A Khanaki, H Tian, Z Zuo, JG Zheng, J Liu Thin Solid Films 627, 39-43, 2017 | 21 | 2017 |
| Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures A Khanaki, H Tian, Z Xu, R Zheng, Y He, Z Cui, J Yang, J Liu Nanotechnology 29 (3), 035602, 2017 | 19 | 2017 |
| Self-assembled cubic boron nitride nanodots A Khanaki, Z Xu, H Tian, R Zheng, Z Zuo, JG Zheng, J Liu Scientific Reports 7 (1), 4087, 2017 | 12 | 2017 |
| Effects of high-temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures Z Xu, C Zhu, Z Huo, S Zhao, M Liu Journal of Physics D: Applied Physics 45 (18), 185103, 2012 | 10 | 2012 |
| Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer ZW Zheng, ZL Huo, CX Zhu, ZG Xu, J Liu, M Liu Chinese Physics B 20 (10), 108501, 2011 | 10 | 2011 |
| Precipitation growth of graphene under exfoliated hexagonal boron nitride to form heterostructures on cobalt substrate by molecular beam epitaxy R Zheng, A Khanaki, H Tian, Y He, Y Cui, Z Xu, J Liu Applied Physics Letters 111 (1), 2017 | 8 | 2017 |
| Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix Z Xu, C Zhu, Z Huo, Y Cui, Y Wang, F Li, M Liu Applied Physics Letters 100 (20), 2012 | 8 | 2012 |
| Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications Z Xu, Z Huo, C Zhu, Y Cui, M Wang, Z Zheng, J Liu, Y Wang, F Li, M Liu Journal of Applied Physics 110 (10), 2011 | 8 | 2011 |
| A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications J Zhang, Y Wang, J Liu, M Zhang, Z Xu, Z Huo, M Liu Journal of Semiconductors 33 (8), 084006, 2012 | 2 | 2012 |
| Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory C Zhu, Z Xu, Z Huo, Z Zheng, Y Cui, Y Wang, J Liu, F Li, M Liu Journal of Physics D: Applied Physics 45 (6), 065104, 2012 | 2 | 2012 |
| High performance MAHAHOS memory devices: charge trapping and distribution in bandgap engineered structure C Zhu, Z Xu, R Yang, Z Huo, Y Cui, D Shi, Y Wang, J Liu, G Zhang, F Li, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 1 | 2012 |
| Performance optimization for TANOS by using pre-treatment of plasma oxygenic ions Z Xu, Z Huo, C Zhu, J Liu, M Liu 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 1-4, 2011 | 1 | 2011 |
Alireza KhanakiIntel Corporation在 intel.com 的电子邮件经过验证
