受强制性开放获取政策约束的文章 - Anushka Bansal了解详情
无法在其他位置公开访问的文章：3 篇
Colorimetric detection of cholesterol based on highly efficient peroxidase mimetic activity of graphene quantum dots
NR Nirala, S Abraham, V Kumar, A Bansal, A Srivastava, PS Saxena
Sensors and Actuators B: Chemical 218, 42-50, 2015
强制性开放获取政策： Department of Science & Technology, India
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers
X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ...
ACS nano 13 (3), 3341-3352, 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
Different shades of cholesterol: Gold nanoparticles supported on MoS 2 nanoribbons for enhanced colorimetric sensing of free cholesterol
NR Nirala, S Pandey, A Bansal, VK Singh, B Mukherjee, PS Saxena, ...
Biosensors and Bioelectronics 74, 207-213, 2015
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：18 篇
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire
M Chubarov, TH Choudhury, DR Hickey, S Bachu, T Zhang, A Sebastian, ...
ACS nano 15 (2), 2532-2541, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
A Kozhakhmetov, B Schuler, AMZ Tan, KA Cochrane, JR Nasr, ...
Advanced Materials 32 (50), 2005159, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy, Swiss National …
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
H Zhu, N Nayir, TH Choudhury, A Bansal, B Huet, K Zhang, AA Puretzky, ...
Nature nanotechnology, 1-8, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Multi-layered graphene quantum dots derived photodegradation mechanism of methylene blue
S Umrao, P Sharma, A Bansal, R Sinha, RK Singh, A Srivastava
RSC Advances 5 (64), 51790-51798, 2015
强制性开放获取政策： Department of Science & Technology, India
Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
JS Lundh, B Chatterjee, Y Song, AG Baca, RJ Kaplar, TE Beechem, ...
Applied Physics Letters 115 (15), 2019
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition
X Zhang, S Lee, A Bansal, F Zhang, M Terrones, TN Jackson, ...
Journal of Crystal Growth 533, 125471, 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs
B Chatterjee, JS Lundh, Y Song, D Shoemaker, AG Baca, RJ Kaplar, ...
IEEE Electron Device Letters 41 (3), 461-464, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire
A Bansal, M Hilse, B Huet, K Wang, A Kozhakhmetov, JH Kim, S Bachu, ...
ACS Applied Materials & Interfaces 13 (45), 54516-54526, 2021
强制性开放获取政策： US National Science Foundation
Advanced methodology for measuring the extensive elastic compliance and mechanical loss directly in k31 mode piezoelectric ceramic plates
M Majzoubi, HN Shekhani, A Bansal, E Hennig, T Scholehwar, K Uchino
Journal of Applied Physics 120 (22), 2016
强制性开放获取政策： 中国科学院
Effect of Ge doping on growth stress and conductivity in AlxGa1-xN
A Bansal, K Wang, JS Lundh, S Choi, JM Redwing
Applied Physics Letters 114 (14), 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
Bulk Ultrafine-Grained Interstitial-Free Steel Processed by Equal-Channel Angular Pressing Followed by Flash Annealing
D Verma, SA Pandey, A Bansal, S Upadhyay, NK Mukhopadhyay, ...
Journal of Materials Engineering and Performance, 1-10, 2016
强制性开放获取政策： Department of Science & Technology, India
Atomic-scale probing of defect-assisted Ga intercalation through graphene using ReaxFF molecular dynamics simulations
N Nayir, MY Sengul, AL Costine, P Reinke, S Rajabpour, A Bansal, ...
Carbon 190, 276-290, 2022
强制性开放获取政策： US National Science Foundation
Gas source chemical vapor deposition of hexagonal boron nitride on C-plane sapphire using B2H6 and NH3
A Bansal, X Zhang, JM Redwing
Journal of Materials Research 36 (23), 4678-4687, 2021
强制性开放获取政策： US National Science Foundation
Improving high power properties of PZT ceramics by external DC bias field
A Bansal, HN Shekhani, M Majzoubi, E Hennig, T Scholehwar, K Uchino
Journal of the American Ceramic Society, 2018
强制性开放获取政策： US Department of Defense
Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si (111) Template Layer Formed by Aluminum‐Induced Crystallization
MF Hainey, ZY Al Balushi, K Wang, NC Martin, A Bansal, M Chubarov, ...
physica status solidi (RRL)-Rapid Research Letters, 2018
强制性开放获取政策： US National Science Foundation
Toward a Mechanistic Understanding of the Formation of 2D-GaNx in Epitaxial Graphene
A Bansal, N Nayir, K Wang, P Rondomanski, S Subramanian, S Kumari, ...
ACS nano 17 (1), 230-239, 2022
强制性开放获取政策： US National Science Foundation
Cathodoluminescence spatially resolves optical transitions in thick group-III and N-polar InGaN films
A Bansal, JM Redwing, ZY Al Balushi
Journal of Applied Physics 128 (17), 2020
强制性开放获取政策： US National Science Foundation
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