| Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy R Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS Harris Applied Physics Letters 99 (18), 181125-181125-3, 2011 | 329 | 2011 |
| Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy Y Huo, H Lin, R Chen, M Makarova, Y Rong, M Li, TI Kamins, J Vuckovic, ... Applied Physics Letters 98 (1), 2011 | 181 | 2011 |
| Investigation of the direct band gaps in Ge1− xSnx alloys with strain control by photoreflectance spectroscopy H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris Applied Physics Letters 100 (10), 2012 | 144 | 2012 |
| GeSn technology: Extending the Ge electronics roadmap S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ... 2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011 | 135 | 2011 |
| Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge (Sn) materials for micro-and nanophotonics R Chen, S Gupta, YC Huang, Y Huo, CW Rudy, E Sanchez, Y Kim, ... Nano letters 14 (1), 37-43, 2014 | 134 | 2014 |
| Raman study of strained Ge1− xSnx alloys H Lin, R Chen, Y Huo, TI Kamins, JS Harris Applied Physics Letters 98 (26), 2011 | 127 | 2011 |
| Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–xSnx): A Novel Route for Ge1–xSnx Nanostructure Fabrication S Gupta, R Chen, YC Huang, Y Kim, E Sanchez, JS Harris, KC Saraswat Nano letters 13 (8), 3783-3790, 2013 | 109 | 2013 |
| Material Characterization of High Sn-Content, Compressively-Strained GeSn Epitaxial Films after Rapid Thermal Processing R Chen, YC Huang, S Gupta, AC Lin, E Sanchez, Y Kim, KC Saraswat, ... Journal of Crystal Growth, 2012 | 97 | 2012 |
| Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris Applied Physics Letters 100 (14), 141908, 2012 | 54 | 2012 |
| Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ... 2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012 | 49 | 2012 |
| Low-temperature growth of Ge< sub> 1− x</sub> Sn< sub> x</sub> thin films with strain control by molecular beam epitaxy H Lin, R Chen, Y Huo, TI Kamins, JS Harris Thin Solid Films, 2012 | 34 | 2012 |
| Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment S Gupta, R Chen, JS Harris, KC Saraswat Applied Physics Letters 103 (24), 2013 | 32 | 2013 |
| GeSn channel n and p MOSFETs S Gupta, R Chen, B Vincent, D Lin, B Magyari-Kope, M Caymax, ... ECS Transactions 50 (9), 937, 2013 | 31 | 2013 |
| X-ray diffraction analysis of step-graded InxGa1− xAs buffer layers grown by molecular beam epitaxy H Lin, Y Huo, Y Rong, R Chen, TI Kamins, JS Harris Journal of crystal growth 323 (1), 17-20, 2011 | 23 | 2011 |
| MBE growth of tensile-strained Ge quantum wells and quantum dots Y Huo, H Lin, R Chen, Y Rong, TI Kamins, JS Harris Frontiers of Optoelectronics in China, 1-5, 2012 | 20 | 2012 |
| Dry-wet digital etching of Ge1− xSnx CK Shang, V Wang, R Chen, S Gupta, YC Huang, JJ Pao, Y Huo, ... Applied Physics Letters 108 (6), 2016 | 19 | 2016 |
| Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator with 20-nm Free Spectral Range S Cho, R Chen, S Koo, G Shambat, H Lin, N Park, J Vuckovic, T Kamins, ... Photonics Technology Letters, IEEE, 1-1, 2011 | 18 | 2011 |
| Fabrication of GeSn-on-insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics JYJ Lin, S Gupta, YC Huang, Y Kim, M Jin, E Sanchez, R Chen, K Balram, ... 2013 Symposium on VLSI Technology, T32-T33, 2013 | 14 | 2013 |
| Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon CK Shang, R Chen, S Gupta, YC Huang, Y Huo, E Sanchez, Y Kim, ... Silicon Photonics X 9367, 341-346, 2015 | 6 | 2015 |
| MBE growth of GeSn and SiGeSn heterojunctions for photonic devices JS Harris, H Lin, R Chen, Y Huo, E Fei, S Paik, S Cho, T Kamins ECS Transactions 50 (9), 601, 2013 | 6 | 2013 |
James S. Harris, Jr.Professor of Electrical Engineering, Stanford University在 stanford.edu 的电子邮件经过验证
