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Charalampos Londos
Charalampos Londos
Professor of Physics
在 phys.uoa.gr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Oxygen defect processes in silicon and silicon germanium
A Chroneos, EN Sgourou, CA Londos, U Schwingenschlögl
Applied Physics Reviews 2 (2), 2015
842015
Point defect engineering strategies to suppress A-center formation in silicon
A Chroneos, CA Londos, EN Sgourou, P Pochet
Applied Physics Letters 99 (24), 2011
832011
Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si
EN Sgourou, D Timerkaeva, CA Londos, D Aliprantis, A Chroneos, ...
Journal of Applied Physics 113 (11), 2013
732013
Effect of tin doping on oxygen-and carbon-related defects in Czochralski silicon
A Chroneos, CA Londos, EN Sgourou
Journal of Applied Physics 110 (9), 2011
702011
Interaction of A-centers with isovalent impurities in silicon
A Chroneos, CA Londos
Journal of Applied Physics 107 (9), 2010
662010
Carbon related defects in irradiated silicon revisited
H Wang, A Chroneos, CA Londos, EN Sgourou, U Schwingenschlögl
Scientific reports 4 (1), 4909, 2014
542014
Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium
CA Londos, A Andrianakis, VV Emtsev, H Ohyama
Semiconductor science and technology 24 (7), 075002, 2009
472009
A-centers in silicon studied with hybrid density functional theory
H Wang, A Chroneos, CA Londos, EN Sgourou, U Schwingenschlögl
Applied Physics Letters 103 (5), 2013
432013
Vacancy-oxygen defects in silicon: the impact of isovalent doping
CA Londos, EN Sgourou, D Hall, A Chroneos
Journal of Materials Science: Materials in Electronics 25, 2395-2410, 2014
392014
Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing
CA Londos, A Andrianakis, V Emtsev, H Ohyama
Journal of Applied Physics 105 (12), 2009
372009
Carbon-related radiation damage centres and processes in p-type Si
CA Londos
Semiconductor science and technology 5 (7), 645, 1990
361990
IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon
CA Londos, A Andrianakis, EN Sgourou, VV Emtsev, H Ohyama
Journal of Applied Physics 109 (3), 2011
342011
A-centers and isovalent impurities in germanium: Density functional theory calculations
A Chroneos, CA Londos, H Bracht
Materials Science and Engineering: B 176 (5), 453-457, 2011
322011
Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon
CA Londos, D Aliprantis, EN Sgourou, A Chroneos, P Pochet
Journal of Applied Physics 111 (12), 2012
312012
Room‐temperature irradiation of p‐type Silicon
CA Londos
physica status solidi (a) 92 (2), 609-614, 1985
311985
The CiCs (SiI) defect in silicon: An infrared spectroscopy study
MS Potsidi, CA Londos
Journal of applied physics 100 (3), 2006
282006
Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon
CA Londos, EN Sgourou, A Chroneos, VV Emtsev
Semiconductor science and technology 26 (10), 105024, 2011
252011
G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach
H Wang, A Chroneos, CA Londos, EN Sgourou, U Schwingenschlögl
Journal of Applied Physics 115 (18), 2014
242014
Isochronal annealing studies of carbon-related defects in irradiated Si
CA Londos, MS Potsidi, GD Antonaras, A Andrianakis
Physica B: Condensed Matter 376, 165-168, 2006
242006
Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective
CA Londos, EN Sgourou, A Chroneos
Journal of Applied Physics 112 (12), 2012
232012
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