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Sanowar Alam Gazi
Sanowar Alam Gazi
Student
在 iitb.ac.in 的电子邮件经过验证
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引用次数
引用次数
年份
Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam epitaxy
SR Shriram, R Kumar, D Panda, J Saha, B Tongbram, MR Mantri, SA Gazi, ...
IEEE Transactions on Nanotechnology 19, 601-608, 2020
102020
Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural …
R Gourishetty, D Panda, S Dongre, J Saha, SA Gazi, S Chakrabarti
Journal of Luminescence 233, 117899, 2021
92021
Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment
R Kumar, J Saha, D Panda, R Kumar, SA Gazi, R Gourishetty, ...
Optical Materials 108, 110419, 2020
92020
The role and growth of strain–reducing layer by molecular-beam epitaxy in a multi–stack InAs/(In, Ga) As sub-monolayer quantum dot heterostructure
SR Shriram, D Panda, R Kumar, J Saha, B Tongbram, MR Mantri, SA Gazi, ...
Optical Materials 114, 110817, 2021
82021
In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing
S Dongre, S Paul, S Mondal, R Kumar, D Panda, SA Gazi, D Das, ...
ACS Applied Electronic Materials 2 (5), 1243-1253, 2020
72020
Growth of dilute quaternary alloy InPNBi and its′ characterization
S Das, AS Sharma, SA Gazi, S Dhar
Journal of Crystal Growth 535, 125532, 2020
72020
Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory
R Kumar, J Saha, D Panda, R Kumar, SA Gazi, R Gourishetty, ...
Low-Dimensional Materials and Devices 2020 11465, 85-94, 2020
62020
Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage
R Gourishetty, D Panda, S Dongre, SA Gazi, S Chakrabarti
Journal of Luminescence 239, 118340, 2021
52021
Improved carrier transfer in vertically coupled surface and buried InAs Stranski-Krastanov quantum dot system via ex-situ surface state passivation
MR Mantri, D Panda, D Das, S Mondal, S Paul, SA Gazi, R Kumar, ...
Journal of Luminescence 226, 117470, 2020
42020
Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers
AS Sharma, S Das, SA Gazi, S Dhar
Journal of Applied Physics 126 (15), 2019
42019
Optimization of vertical strain coupling in InAs/GaAs pip quantum dot infrared photodetectors with applied growth strategy
S Dongre, S Paul, S Mondal, D Panda, SR Shriram, MR Mantri, SA Gazi, ...
Journal of Luminescence 226, 117499, 2020
32020
A novel heterostructure with multilayer Stranski-Krastanov QDs heterogeneously coupled to Submonolayer QDs for enhanced optical and material characteristics
R Gourishetty, D Panda, R Kumar, SA Gazi, S Chakrabarti
Low-Dimensional Materials and Devices 2020 11465, 143-150, 2020
32020
Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures
SR Shriram, R Kumar, SA Gazi, J Saha, D Panda, A Mandal, ...
Nanophotonics VIII 11345, 287-293, 2020
32020
Optical and structural investigation of multilayer InAs SK QDs with In0. 15Ga0. 85As strain-reducing layer electronically coupled to SML QDs grown by molecular beam epitaxy
R Gourishetty, DP Panda, SA Gazi, S Chakrabarti
Quantum Optics and Photon Counting 2021 11771, 143-148, 2021
22021
Short-wave infrared (SWIR) photodetection by InAs/GaAs quantum dot heterostructures grown on Ge (100) substrate without Migration Enhanced Epitaxy layer
R Kumar, D Panda, J Saha, SA Gazi, S Chakrabarti
Superlattices and Microstructures 148, 106714, 2020
22020
Submonolayer quantum dots in PiP configuration: study on effects of monolayer coverage and stacking variations
S Dongre, D Panda, SA Gazi, D Das, R Kumar, N Pandey, A Kumar, ...
Quantum Dots, Nanostructures, and Quantum Materials: Growth …, 2020
22020
Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers
SR Shriram, SA Gazi, R Kumar, J Saha, D Panda, A Mandal, ...
Nanophotonics VIII 11345, 294-301, 2020
12020
Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer
R Kumar, D Panda, J Saha, S Dongre, SA Gazi, S Chakrabarti
Nanophotonics VIII 11345, 280-286, 2020
12020
The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots
RA Dahale, A Aanand, SA Gazi, S Dongre, S Paul, S Mondal, A Agarwal, ...
Low-Dimensional Materials and Devices 2019 11085, 111-116, 2019
12019
The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots
A Agarwal, A Aanand, SA Gazi, S Dongre, S Paul, S Mondal, RA Dahale, ...
Low-Dimensional Materials and Devices 2019 11085, 102-110, 2019
12019
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