Characterization of an asymmetric InGaAsP/InP multi-quantum well semiconductor optical amplifier

JE Nkanta, R Maldonado-Basilio… - Photonics North …, 2013 - spiedigitallibrary.org
An experimental characterization of broadband semiconductor optical amplifiers (SOAs) at
1360 nm is reported. In addition to their inherent small size, fast dynamics, and feasibility of …

[PDF][PDF] Characterization of an Asymmetric InGaAsP/InP Multi Quantum Well Semiconductor Optical Amplifier

JE Nkanta, R Maldonado-Basilio, A Benhsaien… - Proc. of SPIE Vol - researchgate.net
An experimental characterization of broadband semiconductor optical amplifiers (SOAs) at
1360 nm is reported. In addition to their inherent small size, fast dynamics, and feasibility of …

Characterization of an Asymmetric InGaAsP/InP Multi Quantum Well Semiconductor Optical Amplifier

JE Nkanta, R Maldonado-Basilio, A Benhsaien… - Proc. of SPIE … - spiedigitallibrary.org
An experimental characterization of broadband semiconductor optical amplifiers (SOAs) at
1360 nm is reported. In addition to their inherent small size, fast dynamics, and feasibility of …

Characterization of an asymmetric InGaAsP/InP multi-quantum well semiconductor optical amplifier

JE Nkanta, R Maldonado-Basilio… - Society of Photo …, 2013 - ui.adsabs.harvard.edu
An experimental characterization of broadband semiconductor optical amplifiers (SOAs) at
1360 nm is reported. In addition to their inherent small size, fast dynamics, and feasibility of …

[PDF][PDF] Characterization of an Asymmetric InGaAsP/InP Multi Quantum Well Semiconductor Optical Amplifier

JE Nkanta, R Maldonado-Basilio, A Benhsaien, K Khan… - Proc. of SPIE Vol - academia.edu
An experimental characterization of broadband semiconductor optical amplifiers (SOAs) at
1360 nm is reported. In addition to their inherent small size, fast dynamics, and feasibility of …

[PDF][PDF] Characterization of an Asymmetric InGaAsP/InP Multi Quantum Well Semiconductor Optical Amplifier

JE Nkanta, R Maldonado-Basilio, A Benhsaien, K Khan… - Proc. of SPIE Vol - academia.edu
An experimental characterization of broadband semiconductor optical amplifiers (SOAs) at
1360 nm is reported. In addition to their inherent small size, fast dynamics, and feasibility of …