Mathematical modelling should form the basis of any educational system, especially the engineering education, because it indicates the proper place with suitable tools to achieve the desired result for a set of given input variables. Thus, it plays a very big role in the engineering education considering the views of all stake holders to improve the quality of the outcome. It is needless to say that stake holders are students, guardians, faculty positions, management groups, and very importantly the industrialist as employers and others. These variables are properly set in the mathematical model to achieve the desired outcome. If the desired result is not achieved, a relook in the mathematical modelling with fine tuning of increasing or decreasing any one or more variables is done to achieve the set goal. Thus, the variables of mathematical modelling should be tuned such that the set goal should be achieved very easily and neatly.

There are numerous methods of mathematical modelling available in the literature based on equivalent circuit approach [1–9]. Chirlian [1] suggested very general approach; wherein any three terminal devices can fit in it. Mitra [5], Gray et al.[7] and Millman et al.[3, 9] have provided more particular equivalent circuit approaches for BJTs and MOSFETs. One has to select the proper mathematical modelling scheme in a given constraint to achieve the best result with ease. As an instance, the transfer function of linear, timeinvariant, differential equation system is best suited for the Laplace transform method. The nullor [10, 11] and admittance matrix [12] methods have been used in the symbolic form extensively in the past. We have suggested an elegant mathematical modelling approach for both active devices and passive circuits and components, called the floating admittance matrix model. As the word spelt floating, it does not have any reference terminal in the analysis and design of any circuit whether active or passive or mixed of the active devices and passive components. The floating admittance matrix (FAM) model has been developed for the BJT or MOSFET to demonstrate the beauty of the method over other conventional techniques. The outcome of the developed mathematical models has been