Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures
RP Lu, KL Kavanagh, SJ Dixon-Warren… - Journal of Vacuum …, 2001 - pubs.aip.org
Two-dimensional carrier profiling using scanning spreading resistance microscopy (SSRM)
has recently been reported for Si-and InP-based structures. In this article, we report SSRM
measurements solely on III–V material-based structures. We have studied GaAs and InP
doping staircase structures, prepared using molecular-beam epitaxy. These structures were
then used as calibration standards for the profiling of carrier density in state-of-the-art III–V-
based optoelectronic devices. We discovered that SSRM data on GaAs can be obtained with …
has recently been reported for Si-and InP-based structures. In this article, we report SSRM
measurements solely on III–V material-based structures. We have studied GaAs and InP
doping staircase structures, prepared using molecular-beam epitaxy. These structures were
then used as calibration standards for the profiling of carrier density in state-of-the-art III–V-
based optoelectronic devices. We discovered that SSRM data on GaAs can be obtained with …
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