Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
R Kudrawiec, M Syperek, P Poloczek… - Journal of Applied …, 2009 - pubs.aip.org
The carrier localization phenomenon has been investigated for GaBiAs by photomodulated
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a
decrease in the energy-gap related PT signal has been clearly observed below 180 K. In PL
spectra a broad emission band very sensitive to the excitation power has been found. In
comparison to the energy-gap related transition, this band is shifted to red. The
recombination time for this band at low temperature decreases from 0.7 to 0.35 ns with the …
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a
decrease in the energy-gap related PT signal has been clearly observed below 180 K. In PL
spectra a broad emission band very sensitive to the excitation power has been found. In
comparison to the energy-gap related transition, this band is shifted to red. The
recombination time for this band at low temperature decreases from 0.7 to 0.35 ns with the …
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