Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation
Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics
applications. Efficient guiding and confinement of single-mode light in these waveguides
require high aspect ratio geometries. In these conditions, sidewall verticality becomes
crucial. We fabricated such structures using a top-down process combining electron beam
lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs
semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma …
applications. Efficient guiding and confinement of single-mode light in these waveguides
require high aspect ratio geometries. In these conditions, sidewall verticality becomes
crucial. We fabricated such structures using a top-down process combining electron beam
lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs
semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma …
Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N {sub 2}-promoted passivation
Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics
applications. Efficient guiding and confinement of single-mode light in these waveguides
require high aspect ratio geometries. In these conditions, sidewall verticality becomes
crucial. We fabricated such structures using a top-down process combining electron beam
lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs
semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma …
applications. Efficient guiding and confinement of single-mode light in these waveguides
require high aspect ratio geometries. In these conditions, sidewall verticality becomes
crucial. We fabricated such structures using a top-down process combining electron beam
lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs
semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma …
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