InP nanowires grown on silicon substrate are investigated using time-resolved
spectroscopy. A strong modification of the exciton lifetime is observed (from 0.11 to 1.2 ns)
when the growth temperature is increased from 340 C to 460 C. This strong dependence is
not related to the density of zinc-blende insertions in the wurtzite nanowires or to the wurtzite
exciton linewidth. The excitation power dependence of the lifetime and linewidth is
investigated, and these results allow us to interpret the growth temperature dependence on …