… The results of synthesis and crystal growth of InP are presented. The synthesis is performed
… and the single crystal growth by the LEC technique. Experimental growth conditions are …

… sired planar liquid/solid interface during growth. All of the InP crystals grown for this study
were <… Figure 2 shows a typical VGFInP single crystal. Room temperature mobilities for sulfur …

… to provide desirable electrical characteristics, as the surface on which to grow InP nanostructures.
We examined both the structural and optical properties of resulting InP nanoneedles. …

… material growth or characterization of the InP IGaAs heterojunction.4-7 In this letter, we report
that good quality InP … Material growth and evaluation results of the as-grown InP layers are …

… (AP) MOVPE growth and characterization of GaAlAs/GaAs and GaInAs/InP layers. We
show that ternary layers present composition fluctuations along the growth direction due to the …

… In this letter, we will report the MOVPE growth of InP nanowires of uniform cross section …
as the seed of the VLS growth. The nanowires were characterized by the scanning electron …

… From the angular separation between the InP substrate and the InAlAs buffer layer, we
conclude the typical lattice mismatch is between 2 and 0.5, and the presence of enhanced …

… have recently succeeded in preparing well-crystallized InP QDs11 with diameters ~25 A.
In this work, we report on additional characterization studies of InP QDs, and the successful …

… growth of single-crystalline InP patterns at substrate temperatures down to 220 C by first
activating the precursor, thus enabling the direct growth of InP … characteristics of an InP transistor …

… growth under these conditions is that although zincblende is the only crystallographic habit
found in bulk indium phosphide it is not the only crystal … crystal structure as in the bulk form …