Monolithically integrated 25Gbit/sec receiver for 1.55 μm in photonic BiCMOS technology
D Knoll, S Lischke, L Zimmermann… - Optical Fiber …, 2014 - opg.optica.org
Optical Fiber Communication Conference, 2014•opg.optica.org
… 1) We demonstrate a monolithically integrated 25Gbps receiver as a demonstrator for a
photonic BiCMOS process which allows for dense co-integration of 200GHz bipolar
transistors and CMOS devices with low-loss waveguides and couplers, Si photonic
modulators and, for the first time, high-speed Ge photodiodes. 2) The BiCMOS integrated,
WG-coupled Ge PIN diodes show a 3-dB bandwidth of 35GHz, internal responsivity of more
than 0.6A/W at λ= 1.55µm, and ~ 50nA dark current at 1V. 3) Grating couplers are … Finally …
photonic BiCMOS process which allows for dense co-integration of 200GHz bipolar
transistors and CMOS devices with low-loss waveguides and couplers, Si photonic
modulators and, for the first time, high-speed Ge photodiodes. 2) The BiCMOS integrated,
WG-coupled Ge PIN diodes show a 3-dB bandwidth of 35GHz, internal responsivity of more
than 0.6A/W at λ= 1.55µm, and ~ 50nA dark current at 1V. 3) Grating couplers are … Finally …
Abstract
A monolithically integrated 25Gbps receiver is shown as a demonstrator for a novel photonic BiCMOS process which allows for dense co-integration of 200GHz bipolar transistors and CMOS devices with waveguides, couplers, and Ge photodiodes.
opg.optica.org
以上显示的是最相近的搜索结果。 查看全部搜索结果