Photonic integrated circuits fabricated using ion implantation
S Charbonneau, ES Koteles, PJ Poole… - IEEE Journal of …, 1998 - ieeexplore.ieee.org
IEEE Journal of Selected Topics in Quantum Electronics, 1998•ieeexplore.ieee.org
Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally
results in an increase in the bandgap energy and is accompanied by changes in the
refractive index. A technique, based on ion implantation-induced QW intermixing, has been
developed to enhance the quantum-well intermixing (QWI) rate in selected areas of a wafer.
Such processes offer the prospect of a powerful and simple fabrication route for the
integration of discrete optoelectronic devices and for forming photonic integrated circuits.
results in an increase in the bandgap energy and is accompanied by changes in the
refractive index. A technique, based on ion implantation-induced QW intermixing, has been
developed to enhance the quantum-well intermixing (QWI) rate in selected areas of a wafer.
Such processes offer the prospect of a powerful and simple fabrication route for the
integration of discrete optoelectronic devices and for forming photonic integrated circuits.
Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally results in an increase in the bandgap energy and is accompanied by changes in the refractive index. A technique, based on ion implantation-induced QW intermixing, has been developed to enhance the quantum-well intermixing (QWI) rate in selected areas of a wafer. Such processes offer the prospect of a powerful and simple fabrication route for the integration of discrete optoelectronic devices and for forming photonic integrated circuits.
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