demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown
by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the
doped regions of a separate confinement heterostructure thermalized efficiently into the zero-
dimensional QD states, and stimulated emission at∼ 707 nanometers was observed at 77
kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer …