… Abstract—This paper summarizes recent advances on InAs/InP quantum dash (QD) materials
for lasers … We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) …

… On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are …
Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the …

InAs quantum-dash structures fabricated by self-assembly growth techniques and based on
compound semiconductors lattice matched to InP … by using this quantum-dash laser material …

… epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for … The exciton and biexciton
emission from a single quantum dash was … lines originate from the same single quantum dash. …

… the quantum dash dimensionality nature, we focused on individual quantum dashes obtaining
… The study of the local density of states clearly indicates a 1D quantum-wirelike nature for …

… InAs nanostructures proceeds faster in the direction, and this leads to the formation of quantum
dashes… - and multiple-stack quantum dash lasers on InP substrates with a low threshold …

… well separated from the dash valence states. Hence, we conclude that it is reasonable to
ignore the WL states when modeling InAs/InGaAsP/InP quantum dashes. The calculated band …

… larger for quantum dots at low currents, and reaching similar values for quantum dashes only
at … data transmission at 22.5 and 17.5 Gbit/s for the quantum-dot and quantum-dash lasers. …

… In summary, we have developed inhomogeneous, broadgain InAs/InGaAlAs quantum-dash-in-well
structure on InPsubstrate for broadband SLD and laser applications. The SLDs with …

… In this letter, we will present results of InAs QD lasers (QDLs) with emission wavelengths …
InAs dashes, we obtained an optimal growth temperature of 485 C. S-doped (100) oriented InP …