Contribution of holes to the photorefractive effect in n‐type Bi12SiO20
FP Strohkendl, RW Hellwarth - Journal of applied physics, 1987 - pubs.aip.org
This is the first characterization of both positive and negative charge carriers as well as deep
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …
[引用][C] Contribution of holes to the photorefractive effect in n-type Bi12SiO20
FP STROHKENDL… - Journal of applied …, 1987 - pascal-francis.inist.fr
Contribution of holes to the photorefractive effect in n-type Bi12SiO20 CNRS Inist Pascal-Francis
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
Contribution of holes to the photo refractive effect in n-type Bi12Si02o
FP Strohkendl, RW Hellwarth - J. Appl. Phys, 1987 - pubs.aip.org
This is the first characterization of both positive and negative charge carriers as well as deep
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …
Contribution of holes to the photorefractive effect in n-type Bi12SiO20
FP Strohkendl, RW Hellwarth - Journal of Applied Physics, 1987 - ui.adsabs.harvard.edu
This is the first characterization of both positive and negative charge carriers as well as deep
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …