A new simple technique for the determination of the diffusion length in photoconductive
insulators is presented. A steady-state photocarrier grating is created by two interfering laser …

The recently suggested photocarrier grating technique appears to be the most reliable
method available for the determination of the ambipolar diffusion length in hydrogenated …

The theory underlying the steady-state photocarrier grating technique is presented,
including the effect of surface recombination. Experimental results for amorphous …

This paper presents a theory that is the basis of the steady-state-photocarrier-grating (SSPG)
technique, as a means of determining the diffusion length of photocarriers in amorphous …

The decay of photoconductivity has been used to measure the lifetime of excess carriers in
rectangular samples of germanium and silicon. The sample is illuminated by a short pulse of …

We describe a technique for the determination of the carrier lifetime (τ) and the carrier
mobilities (μ n, μ p) in semiconductors, namely the moving-photocarrier-grating method. This …

The surface‐photovoltage diffusion length measurement is analyzed in depth to determine
its range of applicability and cause of failure when it no longer yields the diffusion length. It is …

The increasing use of amorphous semiconducting films in various commercial applications
has stimulated considerable interest in the electronic transport properties of such materials …

Various spectroscopic techniques for determination of localized-state distributions have
been reported,* and the most widely used methods are the modulated photocurrent2-4 and …

The ambipolar-transport equations including space-charge effects are solved for the case of
a sinusoidal generation of photocarriers in amorphous semiconductors. In the ''lifetime …