Contribution of holes to the photorefractive effect in n‐type Bi12SiO20

FP Strohkendl, RW Hellwarth - Journal of applied physics, 1987 - pubs.aip.org
This is the first characterization of both positive and negative charge carriers as well as deep
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …

Comparative study of photorefractive Bi12SiO20 crystals

FP Strohkendl, P Tayebati, RW Hellwarth - Journal of applied physics, 1989 - pubs.aip.org
We present the results of a comparative experimental study of optical and photorefractive
properties at room temperature of four nominally undoped, single‐crystal, commercially …

Temperature dependence of the electron mobility in photorefractive Bi12SiO20

P Nouchi, JP Partanen, RW Hellwarth - JOSA B, 1992 - opg.optica.org
We have measured the temperature dependence of the electron mobility in a single crystal
of photorefractive n-type cubic Bi_12SiO_20 by using a holographic time-of-flight technique …

The effect of shallow traps on the dark storage of photorefractive grating in Bi12SiO20

P Tayebati - Journal of applied physics, 1991 - pubs.aip.org
Dark decay of photorefractive gratings and persistent photocurrents in Bi12SiO20 are
interpreted using a model of the photorefractive effect which includes shallow traps as well …

Transport length, quantum efficiency, and trap density measurement in Bi12SiO2

PAM dos Santos, PM Garcia, J Frejlich - Journal of applied physics, 1989 - pubs.aip.org
We report the measurement of diffusion transport length LD, quantum efficiency φ for
photoelectron generation, and the Debye screening length and associated trap density NA …

Light‐induced dark decays of photorefractive gratings and their observation in Bi12SiO20

FP Strohkendl - Journal of applied physics, 1989 - pubs.aip.org
We find that the temporal shape and speed of dark decays of photorefractive gratings
depend on the light intensity used to write the grating. We attribute this to the fact that the …

Determination of the photorefractive parameters of Bi12SiO20 by study of the dynamic behavior of complementary gratings

L Boutsikaris, S Mailis, NA Vainos - JOSA B, 1998 - opg.optica.org
The dynamic behavior of the complementary space-charge gratings formed in a
Bi_12SiO_20 crystal through prolonged recording at 780 nm is used to determine a number …

Direct determination of electron mobility in photorefractive Bi12SiO20 by a holographic time‐of‐flight technique

JP Partanen, JMC Jonathan, RW Hellwarth - Applied physics letters, 1990 - pubs.aip.org
The time development of a photorefractive grating created by intersecting 30 ps (532 nrn)
beams in a well-characterized Bi12Si020 crystal (in a static field around 1 kV/em) …

Optical measurement of the photorefractive parameters of Bi12SiO20

RA Mullen, RW Hellwarth - Journal of applied physics, 1985 - pubs.aip.org
We employ an optical technique requiring no electrodes to measure three parameters
characterizing photorefractive traps in nominally undoped n-type bismuth silicate at 515-and …

Fermi level shift in Bi12SiO20 via photon‐induced trap level occupation

AE Attard - Journal of applied physics, 1992 - pubs.aip.org
Photon‐induced local departures from charge neutrality are the origin of the photorefractive
effect. When a periodic photorefractive grating is stored in the material, one can associate …