Optical measurement of the photorefractive parameters of Bi12SiO20

RA Mullen, RW Hellwarth - Journal of applied physics, 1985 - pubs.aip.org
We employ an optical technique requiring no electrodes to measure three parameters
characterizing photorefractive traps in nominally undoped n-type bismuth silicate at 515-and …

Comparative study of photorefractive Bi12SiO20 crystals

FP Strohkendl, P Tayebati, RW Hellwarth - Journal of applied physics, 1989 - pubs.aip.org
We present the results of a comparative experimental study of optical and photorefractive
properties at room temperature of four nominally undoped, single‐crystal, commercially …

Contribution of holes to the photorefractive effect in n‐type Bi12SiO20

FP Strohkendl, RW Hellwarth - Journal of applied physics, 1987 - pubs.aip.org
This is the first characterization of both positive and negative charge carriers as well as deep
traps in any crystal sufficient to predict photorefractive behavior for all beam geometries on …

Direct determination of electron mobility in photorefractive Bi12SiO20 by a holographic time‐of‐flight technique

JP Partanen, JMC Jonathan, RW Hellwarth - Applied physics letters, 1990 - pubs.aip.org
The time development of a photorefractive grating created by intersecting 30 ps (532 nrn)
beams in a well-characterized Bi12Si020 crystal (in a static field around 1 kV/em) …

Light‐induced migration of charge in photorefractive Bi12SiO20 and Bi12GeO20 crystals

MG Jani, LE Halliburton - Journal of applied physics, 1988 - pubs.aip.org
The photoinduced redistribution of charge has been characterized in Bil2GeOZO and
Bi12Si020 crystals using electron spin resonance, thermally stimulated luminescence, and …

Temperature dependence of the electron mobility in photorefractive Bi12SiO20

P Nouchi, JP Partanen, RW Hellwarth - JOSA B, 1992 - opg.optica.org
We have measured the temperature dependence of the electron mobility in a single crystal
of photorefractive n-type cubic Bi_12SiO_20 by using a holographic time-of-flight technique …

Comparison between holographic and transient-photocurrent measurements of electron mobility in photorefractive

JP Partanen, P Nouchi, JMC Jonathan, RW Hellwarth - Physical Review B, 1991 - APS
We have developed a time-of-flight technique for measuring the mobility of photoexcited
charge carriers in certain crystals exhibiting the electro-optic effect. We used this …

Transport length, quantum efficiency, and trap density measurement in Bi12SiO2

PAM dos Santos, PM Garcia, J Frejlich - Journal of applied physics, 1989 - pubs.aip.org
We report the measurement of diffusion transport length LD, quantum efficiency φ for
photoelectron generation, and the Debye screening length and associated trap density NA …

Determinations of the photorefractive parameters of Bi12GeO20 crystals using transient grating analysis

G Pauliat, JM Cohen-Jonathan, M Allain… - Optics …, 1986 - Elsevier
A method to characterize the photorefractive parameters of Bi 12 GeO 20 crystal is
described. An analysis of the transient photoinduced grating under an external applied …

Hologram fixing process at room temperature in photorefractive Bi12SiO20 crystals

JP Herriau, JP Huignard - Applied physics letters, 1986 - pubs.aip.org
We present the first demonstration of a room-temperature grating fixing process in a
photorefractive Bi l2Si02o crystal. This arises from a space-charge compensation due to a …