Photo-electromotive-force effect in semiconductors

S Stepanov - Handbook of advanced electronic and photonic …, 2001 - Elsevier
Publisher Summary This chapter discusses the main areas of possible applications of
adaptive photo-electromotive-force (EMF) detectors—particularly the use of a gallium …

Asymmetric interdigitated metal-semiconductor-metal contacts for improved adaptive photoinduced-electromotive-force detectors

JA Coy, DD Nolte, GJ Dunning, DM Pepper, B Pouet… - JOSA B, 2000 - opg.optica.org
The use of interdigitated metal-semiconductor-metal contacts on semi-insulating GaAs
enhances the responsivity of photoinduced-electromotive-force (photo-EMF) adaptive …

Sensitivity of non-steady-state photoelectromotive force-based adaptive photodetectors and characterization techniques

SI Stepanov - Applied optics, 1994 - opg.optica.org
The light-to-electricity conversion efficiency of the non-steady-state photoelectromotive force
effect and its threshold sensitivity for the detection of phase-modulated optical signals and …

Effective broadband detection of nanometer laser-induced ultrasonic surface displacements by CdTe: V adaptive photoelectromotive force detector

S Stepanov, P Rodrıguez, S Trivedi, CC Wang - Applied physics letters, 2004 - pubs.aip.org
Results of experiments studying the utilization of adaptive CdTe: V photoelectromotive force
(photo-EMF) detector for high-sensitivity broadband detection of laser-generated ultrasound …

[PDF][PDF] Jetlike photoelectromotive force in semiconductors

VI Belinicher, SM Ryvkin - Zh. Eksp. Teor. Fiz, 1981 - physics.uci.edu
The kinetics of the photo-emf in semiconducton is investigated and it is shown that at the
initial instant of time the photo-emf is determined by the free separation of the photo …

Photo-electromotive force crystals for interferometric measurement of vibrational response

RH Marshall, IA Sokolov, YN Ning… - Measurement …, 1996 - iopscience.iop.org
In this work, results from an interferometric vibration sensing system are discussed. The
intrinsic non-steady-state photo-electromotive force characteristics of a photoconductive …

Non‐steady‐state photoelectromotive force in semiconductor crystals with high light absorption

NA Korneev, SI Stepanov - Journal of applied physics, 1993 - pubs.aip.org
The influence of a high light absorption on the photoelectromotive force excited by moving
interference fringes in photoconductive crystals is considered. It is shown that due to a deep …

Direct optical probing of integrated circuits and high-speed devices

JM Wiesenfeld, RK Jain - Semiconductors and Semimetals, 1990 - Elsevier
Publisher Summary This chapter discusses direct optical probing techniques, mainly using
ultrashort pulse lasers, for high-speed integrated circuits (ICs) and devices. Direct optical …

Free-space electro-optics sampling of mid-infrared pulses

Q Wu, XC Zhang - Applied physics letters, 1997 - pubs.aip.org
We report on the coherent detection of ultra-broadband mid-infrared electromagnetic pulses
using a 30-m-thick ZnTe electro-optic sensor. The detected frequency spectrum exceeds 37 …

Advanced materials and device technology for photonic electric field sensors

JE Toney, VE Stenger, SA Kingsley… - Nanophotonics and …, 2012 - spiedigitallibrary.org
Photonic methods for electric field sensing have been demonstrated across the
electromagnetic spectrum from near-DC to millimeter waves, and at field strengths from …