Carrier transport and current oscillation in Bi12GeO20 in the``relaxation semiconductor regime''

H Hayakawa, Y Yoshisato, N Mikoshiba - Journal of Applied Physics, 1973 - pubs.aip.org
New transport and low-frequency current osciIlation phenomena have been observed in a
photoexcited Bil2Ge02o single crystal in the temperature range 77-110 K. These …
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Carrier transport and current oscillation in Bi12GeO20 in the ``relaxation semiconductor regime''

H Hayakawa, Y Yoshisato, N Mikoshiba - Journal of Applied Physics, 1973 - pubs.aip.org
New transport and low‐frequency current oscillation phenomena have been observed in a
photoexcited Bi12GeO20 single crystal in the temperature range 77–110 K. These …

Carrier transport and current oscillation in Bi12GeO20 in the ``relaxation semiconductor regime''

H Hayakawa, Y Yoshisato… - Journal of Applied …, 1973 - ui.adsabs.harvard.edu
New transport and low-frequency current oscillation phenomena have been observed in a
photoexcited Bi 12 GeO 20 single crystal in the temperature range 77-110 K. These …