Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N Benjelloun, M Tapiero, JP Zielinger… - Journal of applied …, 1988 - pubs.aip.org
A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi)
single crystals of Bi12 GeO20 (BGO) has been performed by photoinduced current transient …
被引用次数：61 相关文章

Characterization of deep levels in Bi12Ge020 by photoinduced current transient spectroscopy

N Benjelloun, JP ZieHnger - J. Appl. Phys, 1988 - pubs.aip.org
A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess ofBi)
single crystals ofBi12 Ge020 (BGO) has been performed by photoinduced current transient …

Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N Benjelloun, M Tapiero, JP Zielinger… - Journal of Applied …, 1988 - ui.adsabs.harvard.edu
A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi)
single crystals of Bi 12 GeO 20 (BGO) has been performed by photoinduced current …

[引用][C] Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N BENJELLOUN, M TAPIERO… - Journal of applied …, 1988 - pascal-francis.inist.fr
Characterization of deep levels in Bi12GeO20 by photoinduced current transient
spectroscopy CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

[引用][C] Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N BENJELLOUN, M TAPIERO… - Journal of …, 1988 - American Institute of Physics