Bi 12 GeO 20 single crystal grown by Czochralski method was investigated in terms of
thermoluminescence (TL) properties. TL experiments were performed for various heating …

Bi 12 GeO 20 single crystals were investigated by thermally stimulated current (TSC)
experiments performed in the temperature range of 10–290 K. Recorded TSC glow curve …

Abstract Single crystals of Bi 12 GeO 20 were grown large and of good optical quality. The
thermally stimulated luminescence (TSL) of Bi 12 GeO 20 was studied in the 300–700 K …

A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi)
single crystals of Bi12 GeO20 (BGO) has been performed by photoinduced current transient …

Trapping center properties of bismuth silicon oxide (Bi 12 SiO 20) single crystals were
investigated by thermoluminescence (TL) measurements performed in the 50–400° C …

Photo-induced point defects have been compared in pure, heavily aluminum-doped, and
iron-containing Bi 12 GeO 20 single crystals. The experimental methods were …

In this work, we present a detailed kinetic study of the thermoluminescence of Bi4Ge3O12
(BGO) single crystals grown by the Czochralski technique. A single crystalline phase was …

Abstract Photoluminescence (PL) of Bi 12 GeO 20 and Mo doped Bi 12 GeO 20 (Mo: Bi 12
GeO 20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray …

Changes on the defect structure of Bi 12 GeO 20 (BGO) and Bi 12 SiO 20 (BSO) crystals
induced by thermal treatments and laser irradiation have been studied by means of …

Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are
studied. Both kinds of samples show a dark orange central part or core. Emissions in the …