Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N Benjelloun, M Tapiero, JP Zielinger… - Journal of applied …, 1988 - pubs.aip.org
A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi)
single crystals of Bi12 GeO20 (BGO) has been performed by photoinduced current transient …

Trap level spectroscopy of undoped and Ga‐doped Bi12GeO20 using thermally stimulated conductivity

D Bloom, SWS McKeever - Journal of applied physics, 1995 - pubs.aip.org
The analysis of thermally stimulated conductivity (TSC) measurements performed on
''pure''Bi12GeO20 (BGO) and BGO doped with gallium is presented. The TSC data show …

Charge transfer mechanisms between some shallow-trap centres involved in the photochromism of Bi12GeO20

H Marquet, JC Merle, JG Gies - Optical Materials, 2000 - Elsevier
Charge transfers between traps in undoped Bi12GeO20 (BGO) crystals have been
investigated so as to complete our previous studies concerning the mechanism of the …

Trapping of photocarriers in Ga‐doped Bi12GeO20 at 80 K

D Bloom, SWS McKeever - Journal of applied physics, 1995 - pubs.aip.org
D&a from measurements of optical absorption, photoconductivity, dark conductivity,
thermally stimulated conductivity (TSC), and thermoluminescence JTL) on samples of …

Conductivity Instabilities and Polarization Effects of Bi12(Ge, Si) O20 single‐Crystal Samples

R Oberschmid - physica status solidi (a), 1985 - Wiley Online Library
When subjected to measurements of temperature‐dependent dark conductivity and
thermally stimulated currents, undoped and lightly doped Bi12GeO20 (BGO) and Bi12SiO20 …

Thermally stimulated current studies of bismuth germanium oxide crystal

T Takamori, D Just - Journal of applied physics, 1991 - pubs.aip.org
Thermally stimulated current (TSC) from nominally undoped Bi12GeO20 (BGO) crystals was
measured as a function of the uv excitation temperature and time. The results were …

Trapping levels in Bi12SiO20 crystals

D Petre, I Pintilie, T Botila, ML Ciurea - Journal of applied physics, 1994 - pubs.aip.org
Localized levels play a major role in the electro‐optic properties of Bi12SiO20 (BSO)
crystals. The activation energy of trapping levels was studied by different laboratories using …

Temperature dependence of electron mobility in and using the time-of-flight technique

D Bloom, SWS McKeever - Journal of applied physics, 1997 - pubs.aip.org
We have measured the temperature dependence of the electron mobility between∼ 200
and 300 K in undoped and 0.3% Fe-doped Bi 12 GeO 20 (BGO) and undoped Bi 12 SiO 20 …

Optical Investigation of Eu3+ Doped Bi12GeO20 (BGO) Crystals

M Kowalczyk, TF Ramazanova, VD Grigoryeva… - Crystals, 2020 - mdpi.com
The spectroscopic properties of Eu3+ doped Bi12GeO20 (BGO) sillenite bulk crystals that
were grown by the low-thermal-gradient Czochralski technique (LTG Cz) were investigated …

Cathodoluminescence and photoluminescence in the core region of Bi12GeO20 and Bi12SiO20 crystals

A Cremades, MT Santos, A Remón, JA García… - Journal of applied …, 1996 - pubs.aip.org
Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are
studied. Both kinds of samples show a dark orange central part or core. Emissions in the …