Conductivity Instabilities and Polarization Effects of Bi12(Ge, Si) O20 single‐Crystal Samples

R Oberschmid - physica status solidi (a), 1985 - Wiley Online Library
When subjected to measurements of temperature‐dependent dark conductivity and
thermally stimulated currents, undoped and lightly doped Bi12GeO20 (BGO) and Bi12SiO20 …

Thermally stimulated current studies of bismuth germanium oxide crystal

T Takamori, D Just - Journal of applied physics, 1991 - pubs.aip.org
Thermally stimulated current (TSC) from nominally undoped Bi12GeO20 (BGO) crystals was
measured as a function of the uv excitation temperature and time. The results were …

Trapping of photocarriers in Ga‐doped Bi12GeO20 at 80 K

D Bloom, SWS McKeever - Journal of applied physics, 1995 - pubs.aip.org
D&a from measurements of optical absorption, photoconductivity, dark conductivity,
thermally stimulated conductivity (TSC), and thermoluminescence JTL) on samples of …

Charge transfer mechanisms between some shallow-trap centres involved in the photochromism of Bi12GeO20

H Marquet, JC Merle, JG Gies - Optical Materials, 2000 - Elsevier
Charge transfers between traps in undoped Bi12GeO20 (BGO) crystals have been
investigated so as to complete our previous studies concerning the mechanism of the …

Trapping levels in Bi12SiO20 crystals

D Petre, I Pintilie, T Botila, ML Ciurea - Journal of applied physics, 1994 - pubs.aip.org
Localized levels play a major role in the electro‐optic properties of Bi12SiO20 (BSO)
crystals. The activation energy of trapping levels was studied by different laboratories using …

Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N Benjelloun, M Tapiero, JP Zielinger… - Journal of applied …, 1988 - pubs.aip.org
A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi)
single crystals of Bi12 GeO20 (BGO) has been performed by photoinduced current transient …

Theory of origins of the photorefractive and photoconductive effects in Bi12SiO20

AE Attard - Journal of applied physics, 1991 - pubs.aip.org
We have observed modulation of the dark current in Bi12SiO20 (BSO) as a function of prior
irradiation, and a time‐varying absorption of radiation that is dependent upon prior …

Transport Processes of Photoinduced Carriers in Bismuth Germanium Oxide (Bi12GeO20)

GG Douglas, RN Zitter - Journal of Applied Physics, 1968 - pubs.aip.org
This paper describes some investigations aimed at understanding the transport processes of
excess carriers in bismuth germanium oxide (Bi12Ge02o). Spectral photoconductive …

[引用][C] Thermally Stimulated Currents and Luminescence in Bi12SiO20 and Bi12GeO20

RB Lauer - Journal of Applied Physics, 1971 - pubs.aip.org
Because of their potential for use in electro-optic devices Bh2GeO. o and Bi,. Si02o have
attracted a great deal of attention. H Most of these studies were aimed at understanding their …

Traps and recombination centers in pure and Co-doped Bi12SiO20 crystals

D Nesheva, Z Aneva, M Gospodinov - Journal of Physics and Chemistry of …, 1993 - Elsevier
Abstract Pure and Co-doped (0.36-1.8 mol% Co) Bi 12 SiO 20 crystals have been studied.
The temperature dependence of the dark and photoconductivity, thermostimulated currents …