New transport and low-frequency current osciIlation phenomena have been observed in a
photoexcited Bil2Ge02o single crystal in the temperature range 77-110 K. These …

This paper describes some investigations aimed at understanding the transport processes of
excess carriers in bismuth germanium oxide (Bi12Ge02o). Spectral photoconductive …

When subjected to measurements of temperature‐dependent dark conductivity and
thermally stimulated currents, undoped and lightly doped Bi12GeO20 (BGO) and Bi12SiO20 …

Thermally stimulated depolarization (TSD) in Bi4Ge3O12 single crystals and thin films was
investigated. The TSD spectra were found to contain bands at 185, 230, 270, 290 and 325 K …

The temperature dependence of the photorefractive effect in undoped and Ga-doped
Bi12GeO20 BGO crystals was measured over the temperature range from 40 to 300 K. From …

D&a from measurements of optical absorption, photoconductivity, dark conductivity,
thermally stimulated conductivity (TSC), and thermoluminescence JTL) on samples of …

A photoelectrochemical resistor was constructed using a bismuth germanium oxide
electrode and a liquid junction. Current transport consists of the oxidation and reduction of …

Thermoelectric and current-voltage characteristics of Bi 4 Ge 3 O 12 single crystals have
been measured. It has been found that electrons are the dominant charge carriers in …

CONCLUSIONS The conductivity results reported in this article show that the charge
transport in vitreous Ge02 is due to ionic processes. The frequency and temperature …

The electro-optical coefficient r 41 of Bi 4 Ge 3 O 12, corresponding to the sensitivity of the
optical voltage sensor, and the temperature dependence of response characteristics to …