Trapping of photocarriers in Ga‐doped Bi12GeO20 at 80 K

D Bloom, SWS McKeever - Journal of applied physics, 1995 - pubs.aip.org
D&a from measurements of optical absorption, photoconductivity, dark conductivity,
thermally stimulated conductivity (TSC), and thermoluminescence JTL) on samples of …

Trap level spectroscopy of undoped and Ga‐doped Bi12GeO20 using thermally stimulated conductivity

D Bloom, SWS McKeever - Journal of applied physics, 1995 - pubs.aip.org
The analysis of thermally stimulated conductivity (TSC) measurements performed on
''pure''Bi12GeO20 (BGO) and BGO doped with gallium is presented. The TSC data show …

Transport Processes of Photoinduced Carriers in Bismuth Germanium Oxide (Bi12GeO20)

GG Douglas, RN Zitter - Journal of Applied Physics, 1968 - pubs.aip.org
This paper describes some investigations aimed at understanding the transport processes of
excess carriers in bismuth germanium oxide (Bi12Ge02o). Spectral photoconductive …

[引用][C] Thermally Stimulated Currents and Luminescence in Bi12SiO20 and Bi12GeO20

RB Lauer - Journal of Applied Physics, 1971 - pubs.aip.org
Because of their potential for use in electro-optic devices Bh2GeO. o and Bi,. Si02o have
attracted a great deal of attention. H Most of these studies were aimed at understanding their …

Thermally stimulated luminescence in undoped and doped Bi12GeO20 single crystals

S Denagbe, M Martinaud, M Schvoerer… - Journal of Physics and …, 1990 - Elsevier
Abstract Single crystals of Bi 12 GeO 20 were grown large and of good optical quality. The
thermally stimulated luminescence (TSL) of Bi 12 GeO 20 was studied in the 300–700 K …

Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N Benjelloun, M Tapiero, JP Zielinger… - Journal of applied …, 1988 - pubs.aip.org
A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi)
single crystals of Bi12 GeO20 (BGO) has been performed by photoinduced current transient …

Properties of Pure and Doped Bi12GeO2oand Bi12SiO20 Crystals

BC Grabmaier, R Oberschmid - physica status solidi (a), 1986 - Wiley Online Library
Abstract Bi12GeO20 (BGO) and Bi12SiO20 (BSO) single crystals doped with Al, Ga, P, Pb,
Or, Nd, Zn, Fe, and Eu are grown from the melt in good optical quality. The segregation …

Carrier transport and current oscillation in Bi12GeO20 in the``relaxation semiconductor regime''

H Hayakawa, Y Yoshisato, N Mikoshiba - Journal of Applied Physics, 1973 - pubs.aip.org
New transport and low-frequency current osciIlation phenomena have been observed in a
photoexcited Bil2Ge02o single crystal in the temperature range 77-110 K. These …

Conductivity Instabilities and Polarization Effects of Bi12(Ge, Si) O20 single‐Crystal Samples

R Oberschmid - physica status solidi (a), 1985 - Wiley Online Library
When subjected to measurements of temperature‐dependent dark conductivity and
thermally stimulated currents, undoped and lightly doped Bi12GeO20 (BGO) and Bi12SiO20 …

Thermoluminescence spectra of doped Bi4Ge3O12

SG Raymond, BJ Luff, PD Townsend, X Feng… - Radiation …, 1994 - Elsevier
Abstract Thermoluminescence of Bi 4 Ge 3 O 12 reveals a range of trapping levels which are
common to pure and doped material. The relative intensities of the glow peaks observed …