Thermally stimulated current studies of bismuth germanium oxide crystal
T Takamori, D Just - Journal of applied physics, 1991 - pubs.aip.org
Thermally stimulated current (TSC) from nominally undoped Bi12GeO20 (BGO) crystals was
measured as a function of the uv excitation temperature and time. The results were …
measured as a function of the uv excitation temperature and time. The results were …
Electron excitation and luminescence in Bi4Ge3O12 and Bi4Si3O12 crystals
VY Ivanov, AV Kruzhalov, VA Pustovarov… - Nuclear Instruments and …, 1987 - Elsevier
Reflection, luminescence excitation and thermoluminescence excitation spectra have been
measured for Bi 4 Ge 3 O 12 and Bi 4 Si 3 O 12 crystals in the energy range from 3 to 35 eV …
measured for Bi 4 Ge 3 O 12 and Bi 4 Si 3 O 12 crystals in the energy range from 3 to 35 eV …
Absorption Centers of Bi12GeO20 and Bi12SiO20 Crystals
R Oberschmid - physica status solidi (a), 1985 - Wiley Online Library
The energy gap of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals is about 3.2 eV. The
yellow color of these crystals is due to a broad absorption shoulder in the photon energy …
yellow color of these crystals is due to a broad absorption shoulder in the photon energy …
Defect characterization in Bi12GeO20 single crystals by thermoluminescence
Bi 12 GeO 20 single crystal grown by Czochralski method was investigated in terms of
thermoluminescence (TL) properties. TL experiments were performed for various heating …
thermoluminescence (TL) properties. TL experiments were performed for various heating …
Photoconductivity in amorphous thin films of Ge22Se68Bi 10
Temperature and intensity dependence of steady state photoconductivity is studied in
amorphous thin films of Ge22Se68Bi 10 prepared by vacuum evaporation …
amorphous thin films of Ge22Se68Bi 10 prepared by vacuum evaporation …
Charge transfer mechanisms between some shallow-trap centres involved in the photochromism of Bi12GeO20
H Marquet, JC Merle, JG Gies - Optical Materials, 2000 - Elsevier
Charge transfers between traps in undoped Bi12GeO20 (BGO) crystals have been
investigated so as to complete our previous studies concerning the mechanism of the …
investigated so as to complete our previous studies concerning the mechanism of the …
PHOTOLUMINESCENCE IN Bi12SiO20 AND Bi12GeO20
RB Lauer - Applied Physics Letters, 1970 - pubs.aip.org
A red photoluminescence emission band peaking at 1.95 eV is reported for Bi12SiO20 and
Bi12GeO20. The mechanism for exciting the luminescence transition is considered, and a …
Bi12GeO20. The mechanism for exciting the luminescence transition is considered, and a …
Temperature dependent luminescence of Bi4Ge3O12· discussion of possible models
R Moncorgé, B Jacquier, G Boulon - Journal of Luminescence, 1976 - Elsevier
Absorption, emission, excitation and decay time measurements have been made on a single
crystal of Bi 4 Ge 3 O 12 at different temperatures from 4 to 300 K. A sharp increase in the …
crystal of Bi 4 Ge 3 O 12 at different temperatures from 4 to 300 K. A sharp increase in the …
Luminescence of Bi4 Ge3 O12 : Spectral and decay properties
MJ Weber, RR Monchamp - Journal of Applied Physics, 1973 - pubs.aip.org
Intense broadband emission in the visible is observed from crystals of Bi4Ge3O12 under
optical and x‐ray excitation. From measurements of absorption, reflection, fluorescence, and …
optical and x‐ray excitation. From measurements of absorption, reflection, fluorescence, and …
[引用][C] Effect of preliminary optical excitation of traps on charge transfer in Bi sub (12) GeO sub (20) crystals.
VN Astratov, V Il'inskii - Sov. Phys. Sol. St., 1983