The changes induced by γ-ray irradiation in the optical transmission of some undoped and
impurity doped BGO crystals are investigated. The stoichiometric deviations and the …

Abstract Low-temperature (20-290 K) thermoluminescence spectra of Bi 4 Ge 3 O 12 reveal
a range of trapping levels, some of which are common to both undoped and doped material …

The fundamental reflectivity spectrum in the energy range 1.5–8.5 eV is reported for Bi 12
GeO 20 (BGO) single crystals. From a Kramers-Kronig analysis the optical constants of BGO …

X-ray induced luminescence, photoluminescence and thermoluminescence of nominally
pure Bi 4 Ge 3 O 12 crystals are studied within the 12K-295K temperature range. The broad …

The intrinsic luminescence appearing at 500 nm in Bi 4 Ge 3 O 12 (e-BGO) and that at 450
nm in Bi 12 GeO 20 (s-BGO) have been studied over a wide range of temperature T= 5–300 …

A direct measurement of a key material parameter in photorefractivity, the charge carrier
mobility, has been achieved only recently by means of a holographic time‐of‐flight …

Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are
studied. Both kinds of samples show a dark orange central part or core. Emissions in the …

The absorption and transmission spectra of Bi 12 MO 20 (M= Ge, Si, Ti) sillenite crystals
were studied in the range 300–900 nm. Doping and vacuum annealing were found to have …

Optical absorption and ESR spectra of Bi 12 GeO 20 doped with Cr were measured before
and after illumination with visible light. It was found that Cr 4+ ions in tetrahedral position are …

We have measured the temperature dependence of the electron mobility between∼ 200
and 300 K in undoped and 0.3% Fe-doped Bi 12 GeO 20 (BGO) and undoped Bi 12 SiO 20 …