In this work, first-principles calculations are carried out to investigate the optical and
electronic properties of Bi 12 GeO 20 sillenite with vacancy defects and element doping. The …

Abstract Undoped Bi 4 Ge 3 O 12 single crystals exposed to a moderate dose (less than 15
krad) of X-ray irradiation at 12 K show a rapid decay in the X-ray-induced light emission …

Two-photon absorption (TPA) at 532 nm was investigated in BGO (Bi 12 GeO 20) single
crystals using a 16 ps pulse width Nd: YAG laser. The TPA coefficient was measured to be …

We have observed modulation of the dark current in Bi12SiO20 (BSO) as a function of prior
irradiation, and a time‐varying absorption of radiation that is dependent upon prior …

Localized levels play a major role in the electro‐optic properties of Bi12SiO20 (BSO)
crystals. The activation energy of trapping levels was studied by different laboratories using …

Bismuth silicon oxide and bismuth germanium oxide were grown by the Czochralski method.
Crystals were typically 2 cm in diameter and 5-cm long. Materials were of 99.999% purity …

The red and white Bi 4 Ge 3 O 12 (BGO) crystals had been grown by Vertical Bridgman (VB)
method. The absorption and photoluminescence (PL) spectra of these BGO samples were …

Excitation and emission spectra of Mn-doped Bi 4 Ge 3 O 12 have been studied within the
range 200 to 650 nm. Aside from the 490 mn intrinsic emission band, also present in pure …

Measurements of reflection, emission‐excitation, luminescence decay kinetics, and X‐ray
photoelectron of Bi4Ge3O12 and Bi12GeO20 crystals have been performed, in addition to …

Single crystal and polycrystalline samples of Bi 4 Ge 3 O 12 and Y 3 Al 5 O 12 of known
compositions have been prepared. Thermoluminesce nce (TL), X-ray diffraction and optical …