We report the results of investigation of dielectric spectroscopy study of single crystals of Bi
12 GeO 20 and Bi 12 GeO 20 doped with Co nanoparticles. The complex dielectric constant …

Red Bi4Ge3O12 (BGO) single crystals had been grown by vertical Bridgman (VB) method.
The structure of this crystal was determined by XRD. The absorption and emission spectra of …

Two types of photoelectronic measurements have been used to determine the properties of
HgI2 crystals and photodetector cells: thermally stimulated conductivity, and spectral …

Electron paramagnetic resonance (EPR) measurements at 5 K of cobalt-doped Bi 4 Ge 3 O
12 single crystals are reported. A unique axial spectrum has been detected. It has been …

An investigation of photoconductivity in thin films of Sb 15 Ge 10 Se 75 prepared by vacuum
evaporation is reported. The measurements were carried out at various temperatures and …

Abstract Pure and Fe-doped Bi 12 SiO 20 monocrystals have been studied. Five different
Feoncentrations (0.36, 1.8, 3.6, 7.2 and 10.8 mol%) were incorporated. An increase of the …

Physical mechanisms responsible for nonlinear phenomena and anomalous transient
response of cooled extrinsic far‐infrared photoconductors are discussed. A simple model …

BGO crystals have been grown using the Czochralski method by the West Pomeranian
University of Technology in Szczecin, Poland. We report the measurements of scintillation …

MoO3 and WO3 doped Bi4Ge3O12 (BGO) crystals were grown by the optical floating zone
(OFZ) method. The structure of doped crystals was determined by XRD. The fluorescence …

Photoluminescence spectra and decay kinetics within 10–350 K were measured in the Bi-
doped Y 3 Ga 5 O 12 single crystal prepared by the micro-pulling-down technique …