Abstract Single crystals of Bi 12 GeO 20 were grown large and of good optical quality. The
thermally stimulated luminescence (TSL) of Bi 12 GeO 20 was studied in the 300–700 K …

Absorption, emission, excitation and decay time measurements have been made on a single
crystal of Bi 4 Ge 3 O 12 at different temperatures from 4 to 300 K. A sharp increase in the …

Photo-induced point defects have been compared in pure, heavily aluminum-doped, and
iron-containing Bi 12 GeO 20 single crystals. The experimental methods were …

Bi 12 GeO 20 single crystal grown by Czochralski method was investigated in terms of
thermoluminescence (TL) properties. TL experiments were performed for various heating …

Changes on the defect structure of Bi 12 GeO 20 (BGO) and Bi 12 SiO 20 (BSO) crystals
induced by thermal treatments and laser irradiation have been studied by means of …

D&a from measurements of optical absorption, photoconductivity, dark conductivity,
thermally stimulated conductivity (TSC), and thermoluminescence JTL) on samples of …

Intense broadband emission in the visible is observed from crystals of Bi4Ge3O12 under
optical and x‐ray excitation. From measurements of absorption, reflection, fluorescence, and …

The spectroscopic properties are studied of the broad‐band semiconductor crystals
Bi12GeO20: Nd3+. The spectroscopic information obtained on the character of formation …

Abstract Bi12GeO20 (BGO) and Bi12SiO20 (BSO) single crystals doped with Al, Ga, P, Pb,
Or, Nd, Zn, Fe, and Eu are grown from the melt in good optical quality. The segregation …

The results of a study of the luminescence of Bi 4 Ge 3 O 12 (BGO) crystals at low excitation
intensity by a KrF laser (hv= 4.98 eV) and a two-photon excitation by an intense XeF laser …