Monolithic InAs quantum dash 1.58-micron passively mode-locked lasers grown on an InP
substrate are reported. A repetition rate of up to 18.5 GHz has been realized. The dashes-in …

By extending the net-gain modulation phasor approach to account for the discrete
distribution of the gain and saturable absorber sections in the cavity, a convenient model is …

First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at
fundamental repetition frequencies up to~ 100 GHz are presented. The effects of …

Ultra high repetition rate and very low noise mode locked lasers based on InAs/InP quantum
dash active material Page 1 ULTRA HIGH REPETITION RATE AND VERY LOW NOISE …

Two-section InAs/InP quantum-dash passively mode locked lasers Page 1 Two-section InAs/InP
Quantum-Dash Passively Mode Locked Lasers R. Rosales1, K. Merghem1, A. Martinez1, A …

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP
(001) substrates are reported. Pulsed room-temperature operation demonstrates …

This paper reports recent results on InAs/InP quantum dash–based, two-section, passively
mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 μm at 20 C. The …

Material growth optimization of InAs/InP quantum dashes has allowed the achievement of
single section mode-locked lasers with improved performance in terms of modal gain> 40 …

Several applications are pushing the development of high performance mode-locked lasers:
generation of short pulses for extremely high bit rate transmission at 100 Gb/s and beyond …

In this paper, we assessed the effect of additionally broadened quantum dash (Qdash)
optical transitions in the multi-stack dash-in-a-well laser structure at both, material and …