The ever increasing data streams transmitted via optical networks, combined with a growing
interest in reducing the energy consumption of these same networks, have made it clear that …

Using a model developed in Crosslight PICS3D, we have compared simulated gain and
device performance for InAs/InP quantum dash ridge waveguide lasers with experimental …

Self-assembled quantum dash (QDash) lasers based on InP with an emission wavelength of
about 1.5 μm were grown by molecular beam epitaxy with solid-state sources. Two different …

We investigate the thermal characteristics of multi-stack chirped barrier thickness
InAs/InGaAlAs/InP quantum-dash-in-a-well lasers of different ridge widths 2, 3, 4 and 15 µm …

Calculations show that electron states are not confined in the dashes in 1.55 μ m In As∕ In
P quantum dash-in-a-well laser structures. The combination of strain and three-dimensional …

InAs/InP multiwavelength quantum dash lasers are promising solutions to rising data loads
in our telecommunications systems, as one laser chip can replace many lasers operating at …

The authors report the growth of 6-, 9-, and 12-layer In As∕ In P quantum-dash-in-a-well
(DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser …

In this paper, we assessed the effect of additionally broadened quantum dash (Qdash)
optical transitions in the multi-stack dash-in-a-well laser structure at both, material and …

The static and dynamic properties of state-of-the-art InP-based QDash lasers around 1.55
µm are reported. Demonstrated are ridge waveguide lasers with a total output power of 37 …

We investigate the evolution of current spreading, injection, and radiative differential
efficiencies in InAs/InP quantum dash and InGaAsP quantum well lasers operating at 1550 …