Electric‐field‐induced absorption effect in LPE‐grown InGaAsP/InP multi‐quantum‐well waveguides

M Ishino, Y Matsui, Y Sasai, M Ogura - Journal of applied physics, 1988 - pubs.aip.org
Multi‐quantum‐well (MQW) strip‐loaded waveguides, which are composed of liquid‐phase‐
epitaxy‐grown InGaAsP/InP systems, have been characterized in detail. Several MQW …

Short wavelength (5.36–1.85 μm) nonlinear spectroscopy of coupled InGaAs/AlAs intersubband quantum wells

EL Martinet, HC Chui, GL Woods, MM Fejer… - Applied physics …, 1994 - pubs.aip.org
We report short wavelength second-harmonic generation (SHG) spectroscopy of asymmetric
coupled In0. 6Ga0. 4As/AlAs quantum wells (QWs). The QW is designed to show maximum …

Broadband self-phase modulation, cross-phase modulation, and four-wave mixing in 9-mm-long AlGaAs waveguides

K Dolgaleva, WC Ng, L Qian, JS Aitchison… - Optics letters, 2010 - opg.optica.org
We demonstrate efficient self-phase modulation with a nonlinear phase shift of up to 3π,
broadband cross-phase modulation, and four-wave mixing with a 14nm tunability range in …

Investigation of the modulation efficiency of InGaAsP/InP ridge waveguide phase modulators at 1.55 µm

HS Park, JC Yi, YT Byun, S Lee, SH Kim… - Japanese journal of …, 2003 - iopscience.iop.org
Single-mode P–p–n–N InGaAsP/InP ridge waveguide phase modulators have been
fabricated and investigated at 1.55 µm. The ridge waveguide structure has been designed …

Optimization of InGaAsP/InP quantum well heterostructures for enhanced excitonic electroabsorption effects at 1.55 μm

S Shim, EH Lee - Applied physics letters, 1993 - pubs.aip.org
We report an optimization method on the basis of theoretical calculation to enhance the
excitonic electroabsorption effect in the quaternary InGaAsP/InP quantum well structures for …

Optical properties of an InGaAs-InP interdiffused quantum well

EH Li - IEEE journal of quantum electronics, 1998 - ieeexplore.ieee.org
A comprehensive model is developed for the calculation of polarization-dependent
absorption coefficients and refractive index of the InGaAs-InP interdiffused multiple-quantum …

Optical loss of bandgap shifted InGaAsP/InP waveguide using argon plasma-enhanced quantum well intermixing

X Zhang, JJ He - Advances in Optoelectronics and Micro/nano …, 2010 - ieeexplore.ieee.org
A blue shift of the bandgap 90nm, in an InGaAsP/InP quantum well (QW) structure using
argon plasma enhanced quantum well intermixing (QWI) technique is presented. The loss …

Compact highly-nonlinear AlGaAs waveguides for efficient wavelength conversion

K Dolgaleva, WC Ng, L Qian, JS Aitchison - Optics express, 2011 - opg.optica.org
We report on the efficient nonlinear optical interactions in AlGaAs strip-loaded waveguides
with a wafer composition specifically designed to increase the nonlinear coefficient. We …

[引用][C] A new fabrication process for very low-loss narrow-width InGaAsP/InP waveguides

L SPIEKMAN, F van Ham, M Kroonwijk… - … on Integrated Optics …, 1993 - biblio.ugent.be
SPIEKMAN, L., VAN HAM, F., KROONWIJK, M., OEI, Y., VAN DER TOL, J., GROEN, F., &
Coudenys, G.(1993). A new fabrication process for very low-loss narrow-width InGaAsP/InP …

Highly efficient InGaAs/InAIAs MQW waveguide phase shifter

K Wakita, Y Yoshikuni, Y Kawamura - Electronics letters, 1987 - IET
Characteristics of an optical waveguide phase shifter that uses field-induced variation of the
refractive index change in reverse-biased PIN InGaAs/InAlAs multiple quantum wells …