We investigate the thermal characteristics of multi-stack chirped barrier thickness
InAs/InGaAlAs/InP quantum-dash-in-a-well lasers of different ridge widths 2, 3, 4 and 15 µm …

In this paper, we assessed the effect of additionally broadened quantum dash (Qdash)
optical transitions in the multi-stack dash-in-a-well laser structure at both, material and …

Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54
and 1.78 μm based on the AlGaInAs-AlInAs-InP material system were grown by gas source …

We report a theoretical model for InAs/InP quantum-dash Qdash lasers incorporating a
coupled set of rate equations taking into account the inhomogeneous broadening due to …

The excellent wavelength tuning properties of InP-based quantum dash (QDash) layer
structures were used to realize ultrawide-gain bandwidth lasers for applications in the 1.55 μ …

Singlemode lasers based on AlGaInAs/InAs/InP quantum-dash layers were, for the first time,
fabricated with emission wavelengths in the 1.55 μm telecommunication band. A low thermal …

We report on the demonstration of 50 nm (full-width at half-maximum) broadband stimulated
emission from a chirped AlGaInAs barrier thickness multi-stack InAs/InP quantum dash …

A two-sectioned quantum dash laser structure based on an InAs/InP chirped active region
medium is investigated as a monolithic broadband tunable laser. A thorough parametric …

This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for
lasers and amplifiers, and QD device performance with particular interest in optical …

We have theoretically investigated the thermal characteristics of double-channel ridge–
waveguide InGaAs/InAlAs/InP quantum cascade lasers (QCLs) using a two-dimensional …