This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for
lasers and amplifiers, and QD device performance with particular interest in optical …

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP
(001) substrates are reported. Pulsed room-temperature operation demonstrates …

Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54
and 1.78 μm based on the AlGaInAs-AlInAs-InP material system were grown by gas source …

Several applications are pushing the development of high performance mode-locked lasers:
generation of short pulses for extremely high bit rate transmission at 100 Gb/s and beyond …

InAs quantum-dash structures fabricated by self-assembly growth techniques and based on
compound semiconductors lattice matched to InP substrates were used to realize long …

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-
/dot-like active regions were developed on InP substrates dedicated to cover the extended …

We report on the design, growth, and fabrication of InAs/InP quantum dash (QD) gain
materials and their use in lasers for optical network applications. A noise performance …

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

Mode locking features of single section quantum dash based lasers are investigated.
Particular interest is given to the static spectral phase profile determining the shape of the …

Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55
μm | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella …