We have studied the characteristics of 1.65-mum InAs self-organized quantum-dash lasers
grown on InP (001) substrates, wherein special techniques of p-doping of quantum dashes …

We report a multi-population rate-equation based numerical model for investigating
broadband two-section InAs/InP quantum-dash laser. The model incorporates the quantum …

Self-assembled quantum dash (QDash) lasers based on InP with an emission wavelength of
about 1.5 μm were grown by molecular beam epitaxy with solid-state sources. Two different …

We report on the effect of temperature on the differential gain, differential refractive index,
and linewidth enhancement factor (α-factor) of∼ 1610-nm chirped barrier thickness …

InAs quantum-dash structures fabricated by self-assembly growth techniques and based on
compound semiconductors lattice matched to InP substrates were used to realize long …

We report on the design, growth, and fabrication of InAs/InP quantum dash (QD) gain
materials and their use in lasers for optical network applications. A noise performance …

In this paper the device properties of single mode lasers based on this new quantum-dash
material will be presented. The laser structures were grown by solid-source MBE. They …

2 µm photonics and optoelectronics is promising for potential applications such as optical
communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on …

In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based
lasers emitting around 1.55 μm. An unprecedented high modal gain of∼ 100 cm− 1 is …

Material growth optimization of InAs/InP quantum dashes has allowed the achievement of
single section mode-locked lasers with improved performance in terms of modal gain> 40 …