The effect of the active region inhomogeneity on the spectral characteristics of InAs/InP
quantum-dash (Qdash) lasers is examined theoretically by solving the coupled set of carrier …

The next generation of optical access communication networks that support 100 Gbps and
beyond, require advances in modulation schemes, spectrum utilization, new transmission …

The unprecedented increase in internet traffic witnessed in the last few years has pushed
the community to explore heterogeneous optical networks, including free-space-optics …

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-
/dot-like active regions were developed on InP substrates dedicated to cover the extended …

We report on the design, growth, fabrication, and performance of InAs/InP quantum dash
(QD) multi-wavelength lasers (MWLs) developed by the National Research Council (NRC) …

We report on the uniformity improvement of InAs quantum dashes (QDHs) grown by
molecular beam epitaxy on InP (100) through optimizing double cap technique. Broad-area …

High speed transmissions up to 20Gb/s are reported using 1.55 μm InP-based Quantum
Dash distributed feedback lasers. Combining a directly modulated laser with an etalon filter …

Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their
heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The …

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP
(001) substrates are reported. Pulsed room-temperature operation demonstrates …

The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-
dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing …