A new type of semiconductor laser is studied, in which injected carriers in the active region
are quantum mechanically confined in localized finite self-assembled wire-like …

We propose and demonstrate a compact, cost-effective, multiwavelength laser source
employing self-injection locking scheme on InAs/InP quantum-dash (Qdash) laser diode …

The modulation bandwidth has been identified as a specific limitation of quantum-dot or
quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel …

We examine the electronic structure and optical properties of 1.5-μm InAs/InGaAsP/InP
quantum dash-in-a-well (DWELL) and dash-in-a-barrier (DBAR) lasers. Using 1-D and 3-D …

Calculations show that electron states are not confined in the dashes in 1.55 μ m In As∕ In
P quantum dash-in-a-well laser structures. The combination of strain and three-dimensional …

A directly-modulated quantum-dash Fabry-Perot laser with near-zero α-factor and a
broadband 16-GHz response is demonstrated using strong optical injection. This laser …

The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is
experimentally investigated. An analysis of the timescales related to carrier relaxation and …

InAs-based intersubband quantum cascade (QC) lasers with an improved waveguide
configuration are proposed. Calculations and analyses are presented to show that the …

A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash
(Qdash) lasers as a function of the stack number. The model is based on multimode carrier …

Semiconductor lasers directly grown on silicon offer great potential as critical components in
high-volume, low-cost integrated silicon photonics circuits. Although InAs/InP quantum dash …